P-type SiC Substrate Wafer

Takaitaccen Bayani:

Semicera's P-type SiC Substrate Wafer an ƙera shi don ingantaccen kayan lantarki da aikace-aikacen optoelectronic. Waɗannan wafers suna ba da ƙayyadaddun ɗabi'a da kwanciyar hankali na zafi, yana mai da su manufa don manyan na'urori. Tare da Semicera, tsammanin daidaito da dogaro a cikin wafers na SiC na nau'in P na ku.


Cikakken Bayani

Tags samfurin

Semicera's P-type SiC Substrate Wafer shine maɓalli mai mahimmanci don haɓaka na'urorin lantarki da na'urorin gani na gani. Wadannan wafers an tsara su musamman don samar da ingantaccen aiki a cikin babban iko da yanayin zafi mai zafi, suna tallafawa haɓakar buƙatu na ingantattun abubuwa masu ɗorewa.

Nau'in doping na nau'in P a cikin wafers ɗin mu na SiC yana tabbatar da ingantattun halayen lantarki da cajin motsi mai ɗaukar kaya. Wannan ya sa su dace musamman don aikace-aikace a cikin wutar lantarki, LEDs, da sel na photovoltaic, inda ƙananan asarar wutar lantarki da babban inganci suke da mahimmanci.

An ƙera shi tare da mafi girman ma'auni na daidaito da inganci, Semicera's P-type SiC wafers suna ba da ingantacciyar daidaituwar ƙasa da ƙarancin lahani. Waɗannan halayen suna da mahimmanci ga masana'antu inda daidaito da aminci ke da mahimmanci, kamar su sararin samaniya, motoci, da sassan makamashi masu sabuntawa.

Ƙaddamar da Semicera ga ƙirƙira da ƙwarewa yana bayyana a cikin nau'in SiC Substrate Wafer na mu na P-type. Ta hanyar haɗa waɗannan wafers cikin tsarin samar da ku, kuna tabbatar da cewa na'urorinku sun amfana daga keɓaɓɓen yanayin zafi da lantarki na SiC, yana ba su damar yin aiki yadda ya kamata a ƙarƙashin ƙalubale.

Zuba jari a cikin Semicera's P-type SiC Substrate Wafer yana nufin zabar samfur wanda ya haɗu da ƙwaƙƙwaran kimiyyar abu tare da ƙwararrun injiniya. An sadaukar da Semicera don tallafawa ƙarni na gaba na fasahar lantarki da na optoelectronic, samar da mahimman abubuwan da ake buƙata don nasarar ku a masana'antar semiconductor.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ku/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon Tara≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

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SiC wafers

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