Semicera's P-type SiC Substrate Wafer shine maɓalli mai mahimmanci don haɓaka na'urorin lantarki da na'urorin gani na gani. Wadannan wafers an tsara su musamman don samar da ingantaccen aiki a cikin babban iko da yanayin zafi mai zafi, suna tallafawa haɓakar buƙatu na ingantattun abubuwa masu ɗorewa.
Nau'in doping na nau'in P a cikin wafers ɗin mu na SiC yana tabbatar da ingantattun halayen lantarki da cajin motsi mai ɗaukar kaya. Wannan ya sa su dace musamman don aikace-aikace a cikin wutar lantarki, LEDs, da sel na photovoltaic, inda ƙananan asarar wutar lantarki da babban inganci suke da mahimmanci.
An ƙera shi tare da mafi girman ma'auni na daidaito da inganci, Semicera's P-type SiC wafers suna ba da ingantacciyar daidaituwar ƙasa da ƙarancin lahani. Waɗannan halayen suna da mahimmanci ga masana'antu inda daidaito da aminci ke da mahimmanci, kamar sararin samaniya, motoci, da sassan makamashi masu sabuntawa.
Ƙaddamar da Semicera ga ƙirƙira da ƙwarewa yana bayyana a cikin nau'in SiC Substrate Wafer na mu na P-type. Ta hanyar haɗa waɗannan wafers cikin tsarin samar da ku, kuna tabbatar da cewa na'urorinku sun amfana daga keɓaɓɓen yanayin zafi da lantarki na SiC, yana ba su damar yin aiki yadda ya kamata a ƙarƙashin ƙalubale.
Zuba jari a cikin Semicera's P-type SiC Substrate Wafer yana nufin zabar samfur wanda ya haɗu da ƙwaƙƙwaran kimiyyar abu tare da ƙwararrun injiniya. An sadaukar da Semicera don tallafawa ƙarni na gaba na fasahar lantarki da na optoelectronic, samar da mahimman abubuwan da ake buƙata don nasarar ku a masana'antar semiconductor.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |