SiC masu ɗaukar hoto don etching semiconductor

Takaitaccen Bayani:

Semicera Semiconductor Technology Co., Ltd. shine babban mai samar da kayan yumbu na ci gaba na semiconductor. Babban samfuranmu sun haɗa da: Silicon carbide etched fayafai, Silicon carbide jirgin tirela, Silicon carbide wafer jiragen ruwa (PV & Semiconductor), silicon carbide makera tubes, silicon carbide cantilever paddles, silicon carbide chuck, silicon carbide biams, kazalika da CVD SiC coatings da kuma TaC shafi.

Ana amfani da samfuran galibi a cikin masana'antar semiconductor da masana'antar photovoltaic, kamar haɓakar kristal, epitaxy, etching, marufi, sutura da kayan tanderun watsawa.

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Bayani

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan farfajiyar graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon amsa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

Babban Siffofin

1. High zafin jiki oxidation juriya:
juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.
2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.
3. Juriya juriya: babban taurin, m surface, lafiya barbashi.
4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal	FCC β lokaci
Yawan yawa	g/cm ³	3.21
Tauri	Vickers taurin	2500
Girman hatsi	μm	2 ~ 10
Tsaftar Sinadari	%	99.99995
Ƙarfin zafi	J·k-1 · K-1	640
Zazzabi Sublimation	℃	2700
Ƙarfin Felexural	MPa (RT 4-maki)	415
Modul na Young	Gpa (4pt lankwasa, 1300 ℃)	430
Ƙarfafa Ƙarfafawa (CTE)	10-6K-1	4.5
Ƙarfafawar thermal	(W/mK)	300