Bayani
Semiconductor SiC mai rufin monocrystalline silicon epitaxial disk daga semicera, wani yanki mai yanke shawara wanda aka tsara don ci gaban ci gaban epitaxial. Semicera ya ƙware wajen samar da fayafai masu ƙarfi waɗanda ke ba da kyakkyawan yanayin zafin zafi da dorewa, manufa don aikace-aikace a ciki.Ya da EpitoxykumaSiC Epitoxy. Wannan faifan epitaxial, wanda aka lullube shi da silicon carbide (SiC), yana haɓaka inganci da daidaiton matakan masana'antar semiconductor.
MuMai Rarraba MOCVDfaifan epitaxial mai jituwa mai jituwa yana tabbatar da daidaiton aiki a cikin saiti daban-daban, gami da tsarin da ke buƙatar ɗaukan PSS Etching,ICP EtchingMai ɗaukar kaya, da Mai ɗaukar RTP. An ƙera wannan faifai don biyan manyan buƙatun samar da Silicon na Monocrystalline, yana mai da shi dacewa da aikace-aikacen Susceptor na LED Epitaxial da sauran hanyoyin haɓaka semiconductor. Ƙimar Barrel Susceptor da Pancake Susceptor kayayyaki suna ba da dama ga masu sana'a, yayin da yin amfani da ɓangarorin Photovoltaic yana ƙaddamar da aikace-aikacensa zuwa masana'antar hasken rana.
Tare da ƙaƙƙarfan gininsa, GaN akan iyawar SiC Epitaxy na wannan faifai yana ƙara haɓaka ƙimar sa don ci gaba na tsarin epitaxial. An tsara wannan bayani don samar da abin dogara, sakamako mai kyau, yana mai da shi muhimmin mahimmanci ga semiconductor na zamani da kuma samar da hotovoltaic.
Babban Siffofin
1 .High tsarki SiC mai rufi graphite
2. Mafi girman juriya na zafi & daidaituwar thermal
3. LafiyaSiC crystal mai rufidon m surface
4. Babban karko a kan tsabtace sinadarai
Babban Takaddun Shafi na CVD-SIC Coatings:
SiC-CVD | ||
Yawan yawa | (g/cc) | 3.21 |
Ƙarfin sassauƙa | (Mpa) | 470 |
Fadada thermal | (10-6/K) | 4 |
Ƙarfafawar thermal | (W/mK) | 300 |
Shiryawa da jigilar kaya
Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora:
Yawan (Yankuna) | 1-1000 | > 1000 |
Est. Lokaci (kwanaki) | 30 | Don a yi shawarwari |