Ya da Epitoxy

Takaitaccen Bayani:

Ya da Epitoxy- Samun ingantaccen aikin na'urar tare da Semicera's Si Epitaxy, yana ba da ingantaccen yadudduka na silicon don aikace-aikacen semiconductor na ci gaba.


Cikakken Bayani

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Semiceragabatar da high quality-Ya da Epitoxyayyuka, tsara don saduwa da ma'auni na daidaitattun masana'antar semiconductor na yau. Yaduddukan silicon Epitaxial suna da mahimmanci don aiki da amincin na'urorin lantarki, kuma hanyoyinmu na Si Epitaxy suna tabbatar da cewa abubuwan haɗin ku sun sami kyakkyawan aiki.

Madaidaicin-Babban Silicon Layers Semiceraya fahimci cewa tushen na'urori masu inganci ya ta'allaka ne ga ingancin kayan da ake amfani da su. MuYa da EpitoxyAna sarrafa tsari sosai don samar da yadudduka na silicon tare da ingantacciyar daidaituwa da amincin kristal. Waɗannan yadudduka suna da mahimmanci don aikace-aikacen da suka kama daga microelectronics zuwa na'urori masu ƙarfi na ci gaba, inda daidaito da aminci suke da mahimmanci.

An Inganta don Ayyukan Na'uraTheYa da Epitoxysabis ɗin da Semicera ke bayarwa an keɓance su don haɓaka kayan lantarki na na'urorin ku. Ta hanyar haɓaka manyan yadudduka na silicon tare da ƙarancin ƙarancin lahani, muna tabbatar da cewa kayan aikin ku suna aiki da mafi kyawun su, tare da ingantacciyar motsi mai ɗaukar kaya da ƙarancin juriya na lantarki. Wannan haɓakawa yana da mahimmanci don cimma babban saurin da inganci mai inganci wanda fasahar zamani ke buƙata.

Yawan aiki a cikin Aikace-aikace Semicera'sYa da Epitoxyya dace da aikace-aikace da yawa, gami da samar da transistor na CMOS, MOSFET masu ƙarfi, da transistor junction bipolar. Tsarin mu mai sassauƙa yana ba da damar gyare-gyare bisa ƙayyadaddun buƙatun aikinku, ko kuna buƙatar yadudduka na bakin ciki don aikace-aikacen mitoci masu girma ko yadudduka masu kauri don na'urorin wuta.

Ingantacciyar MaterialQuality shine zuciyar duk abin da muke yi a Semicera. MuYa da Epitoxytsari yana amfani da kayan aiki na zamani da fasaha don tabbatar da cewa kowane siliki na siliki ya dace da mafi girman ma'auni na tsabta da amincin tsari. Wannan kulawa ga daki-daki yana rage faruwar lahani wanda zai iya yin tasiri ga aikin na'urar, yana haifar da ƙarin abin dogaro da dadewa.

Alƙawari ga Ƙirƙiri Semiceraya himmatu wajen kasancewa a sahun gaba na fasahar semiconductor. MuYa da Epitoxyayyuka suna nuna wannan sadaukarwar, tare da haɗa sabbin ci gaba a cikin dabarun haɓaka epitaxial. Muna ci gaba da sabunta hanyoyinmu don isar da yadudduka na silicon waɗanda ke biyan buƙatun masana'antu, tabbatar da cewa samfuran ku sun kasance masu gasa a kasuwa.

Keɓaɓɓen Magani don BuƙatunkuFahimtar cewa kowane aiki na musamman ne,Semicerayayi na musammanYa da Epitoxymafita don dacewa da takamaiman bukatunku. Ko kuna buƙatar bayanan bayanan doping na musamman, kauri mai kauri, ko ƙarewar ƙasa, ƙungiyarmu tana aiki tare da ku don isar da samfurin da ya dace da takamaiman ƙayyadaddun ku.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ya/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon tarawa≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

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SiC wafers

  • Na baya:
  • Na gaba: