Semiceragabatar da high quality-Ya da Epitoxyayyuka, tsara don saduwa da ma'auni na daidaitattun masana'antar semiconductor na yau. Yaduddukan silicon Epitaxial suna da mahimmanci don aiki da amincin na'urorin lantarki, kuma hanyoyinmu na Si Epitaxy suna tabbatar da cewa abubuwan haɗin ku sun sami kyakkyawan aiki.
Madaidaicin-Babban Silicon Layers Semiceraya fahimci cewa tushen na'urori masu inganci ya ta'allaka ne ga ingancin kayan da ake amfani da su. MuYa da EpitoxyAna sarrafa tsari sosai don samar da yadudduka na silicon tare da ingantacciyar daidaituwa da amincin kristal. Waɗannan yadudduka suna da mahimmanci don aikace-aikacen da suka kama daga microelectronics zuwa na'urori masu ƙarfi na ci gaba, inda daidaito da aminci suke da mahimmanci.
An Inganta don Ayyukan Na'uraTheYa da Epitoxysabis ɗin da Semicera ke bayarwa an keɓance su don haɓaka kayan lantarki na na'urorin ku. Ta hanyar haɓaka manyan yadudduka na silicon tare da ƙarancin ƙarancin lahani, muna tabbatar da cewa kayan aikin ku suna aiki da mafi kyawun su, tare da ingantacciyar motsi mai ɗaukar kaya da ƙarancin juriya na lantarki. Wannan haɓakawa yana da mahimmanci don cimma babban saurin da inganci mai inganci wanda fasahar zamani ke buƙata.
Yawan aiki a cikin Aikace-aikace Semicera'sYa da Epitoxyya dace da aikace-aikace da yawa, gami da samar da transistor na CMOS, MOSFET masu ƙarfi, da transistor junction bipolar. Tsarin mu mai sassauƙa yana ba da damar gyare-gyare bisa ƙayyadaddun buƙatun aikinku, ko kuna buƙatar yadudduka na bakin ciki don aikace-aikacen mitoci masu girma ko yadudduka masu kauri don na'urorin wuta.
Ingantacciyar MaterialQuality shine zuciyar duk abin da muke yi a Semicera. MuYa da Epitoxytsari yana amfani da kayan aiki na zamani da fasaha don tabbatar da cewa kowane siliki na siliki ya dace da mafi girman ma'auni na tsabta da amincin tsari. Wannan kulawa ga daki-daki yana rage faruwar lahani wanda zai iya yin tasiri ga aikin na'urar, yana haifar da ƙarin abin dogaro da dadewa.
Alƙawari ga Ƙirƙiri Semiceraya himmatu wajen kasancewa a sahun gaba na fasahar semiconductor. MuYa da Epitoxyayyuka suna nuna wannan sadaukarwar, tare da haɗa sabbin ci gaba a cikin dabarun haɓaka epitaxial. Muna ci gaba da sabunta hanyoyinmu don isar da yadudduka na silicon waɗanda ke biyan buƙatun masana'antu, tabbatar da cewa samfuran ku sun kasance masu gasa a kasuwa.
Keɓaɓɓen Magani don BuƙatunkuFahimtar cewa kowane aiki na musamman ne,Semicerayayi na musammanYa da Epitoxymafita don dacewa da takamaiman bukatunku. Ko kuna buƙatar bayanan bayanan doping na musamman, kauri mai kauri, ko ƙarewar ƙasa, ƙungiyarmu tana aiki tare da ku don isar da samfurin da ya dace da takamaiman ƙayyadaddun ku.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |