Si Substrate ta Semicera wani muhimmin sashi ne a cikin samar da manyan na'urorin semiconductor. Injiniyoyi daga Silicon mai tsafta (Si), wannan kayan aikin yana ba da daidaito na musamman, kwanciyar hankali, da kyakkyawan aiki, yana mai da shi manufa don aikace-aikacen ci gaba da yawa a cikin masana'antar semiconductor. Ko ana amfani da shi a cikin Si Wafer, SiC Substrate, SOI Wafer, ko kuma samar da Substrate na Sin, Semicera Si Substrate yana ba da daidaiton inganci da ingantaccen aiki don biyan buƙatun kayan lantarki na zamani da kimiyyar kayan aiki.
Ayyukan da ba su dace ba tare da Babban Tsafta da Madaidaici
Semicera's Si Substrate an ƙera shi ta amfani da matakai na ci-gaba waɗanda ke tabbatar da tsafta mai ƙarfi da ƙarfi mai ƙarfi. Substrate yana aiki azaman tushe don samar da kayan aiki iri-iri, gami da Epi-Wafers da AlN Wafers. Daidaitaccen daidaito da daidaito na Si Substrate sun sa ya zama kyakkyawan zaɓi don ƙirƙirar yaduddukan epitaxial na bakin ciki-fim da sauran mahimman abubuwan da aka yi amfani da su wajen samar da na'urori masu zuwa na gaba. Ko kuna aiki tare da Gallium Oxide (Ga2O3) ko wasu kayan haɓakawa, Semicera's Si Substrate yana tabbatar da mafi girman matakan dogaro da aiki.
Aikace-aikace a cikin Masana'antar Semiconductor
A cikin masana'antar semiconductor, Si Substrate daga Semicera ana amfani da shi a cikin ɗimbin aikace-aikace, gami da samar da Si Wafer da SiC Substrate, inda yake ba da tabbataccen tushe, ingantaccen tushe don jibge yadudduka masu aiki. Substrate yana taka muhimmiyar rawa wajen ƙirƙira SOI Wafers (Silicon On Insulator), waɗanda ke da mahimmanci don haɓaka microelectronics da haɗaɗɗun da'irori. Bugu da ƙari, Epi-Wafers (epitaxial wafers) da aka gina akan Si Substrates suna da haɗin kai wajen samar da manyan na'urorin semiconductor kamar transistor wuta, diodes, da haɗaɗɗun da'irori.
Si Substrate kuma yana goyan bayan kera na'urori ta amfani da Gallium Oxide (Ga2O3), wani abu mai ban sha'awa mai faɗi da aka yi amfani da shi don aikace-aikace masu ƙarfi a cikin kayan lantarki. Bugu da ƙari, daidaitawar Semicera's Si Substrate tare da AlN Wafers da sauran abubuwan ci gaba yana tabbatar da cewa zai iya biyan buƙatu daban-daban na manyan masana'antu, yana mai da shi mafita mai kyau don samar da na'urori masu tsinke a cikin hanyoyin sadarwa, motoci, da sassan masana'antu. .
Dogaro da Ingancin Nau'i na Babban-Tech Aikace-aikace
Si Substrate ta Semicera an ƙera shi a hankali don biyan buƙatun ƙirƙira na semiconductor. Ƙaƙƙarfan tsarin sa na musamman da kyawawan kaddarorin saman sa ya sa ya zama kayan aiki mai kyau don amfani a cikin tsarin kaset don jigilar wafer, da kuma ƙirƙirar madaidaicin yadudduka a cikin na'urorin semiconductor. Ƙarfin ma'auni don kula da daidaiton inganci ƙarƙashin yanayin tsari daban-daban yana tabbatar da ƙarancin lahani, haɓaka yawan amfanin ƙasa da aikin samfurin ƙarshe.
Tare da mafi girman ƙarfin wutar lantarki, ƙarfin injina, da tsafta mai girma, Semicera's Si Substrate shine kayan zaɓi don masana'antun da ke neman cimma mafi girman ma'auni na daidaito, aminci, da aiki a cikin samar da semiconductor.
Zaɓi Substrate Semicera's Si don Tsaftataccen Tsafta, Maganin Aiki Mai Girma
Ga masana'antun a cikin masana'antar semiconductor, Si Substrate daga Semicera yana ba da ƙarfi, ingantaccen bayani don aikace-aikacen da yawa, daga samar da Si Wafer zuwa ƙirƙirar Epi-Wafers da SOI Wafers. Tare da tsaftar da ba ta dace ba, daidaito, da aminci, wannan ma'auni yana ba da damar samar da na'urori masu amfani da na'urori masu mahimmanci, tabbatar da aiki na dogon lokaci da ingantaccen aiki. Zaɓi Semicera don buƙatun Sis ɗin ku, kuma dogara ga samfurin da aka ƙera don biyan buƙatun fasahar gobe.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |