Bayani
Semicera GaN Epitaxy Carrier an ƙera shi sosai don biyan buƙatun masana'antar semiconductor na zamani. Tare da ginshiƙan kayan inganci da ingantacciyar injiniya, wannan mai ɗaukar kaya ya fice saboda ƙaƙƙarfan aikin sa da amincinsa. Haɗuwa da Haɗin Jirgin Ruwa na Chemical (CVD) Silicon Carbide (SiC) shafi yana tabbatar da tsayin daka, ingancin zafi, da kariya, yana mai da shi zaɓin da aka fi so ga ƙwararrun masana'antu.
Mabuɗin Siffofin
1. Na Musamman DorewaRufin CVD SiC akan GaN Epitaxy Carrier yana haɓaka juriya ga lalacewa da tsagewa, yana haɓaka rayuwar aikinsa sosai. Wannan ƙaƙƙarfan yana tabbatar da daidaiton aiki har ma a cikin yanayin masana'anta da ake buƙata, yana rage buƙatar sauyawa da kulawa akai-akai.
2. Mafi Girman Ƙarfin ƘarfafawaGudanar da thermal yana da mahimmanci a masana'antar semiconductor. Abubuwan ci-gaban thermal na GaN Epitaxy Carrier suna sauƙaƙe ɓarkewar zafi mai inganci, kiyaye yanayin zafi mafi kyau yayin tsarin haɓakar epitaxial. Wannan ingancin ba wai kawai yana inganta ingancin wafers na semiconductor ba har ma yana haɓaka ingantaccen samarwa gabaɗaya.
3. Abubuwan KariyaRufin SiC yana ba da kariya mai ƙarfi daga lalata sinadarai da girgizar zafi. Wannan yana tabbatar da amincin mai ɗaukar kaya ana kiyaye shi cikin tsarin masana'anta, yana kiyaye ƙayyadaddun ƙayyadaddun semiconductor da haɓaka yawan amfanin ƙasa da amincin tsarin masana'anta.
Ƙididdiga na Fasaha:
Aikace-aikace:
Semicorex GaN Epitaxy Carrier ya dace da nau'ikan tsarin masana'antu na semiconductor, gami da:
• GaN epitaxial girma
• Matakan semiconductor masu zafi mai zafi
• Tsarin Turin Sinadari (CVD)
• Sauran ci-gaba na semiconductor masana'antu aikace-aikace