Graphite Susceptor tare da Silicon Carbide Coating, 8 inch wafer Carrier

Mai ɗaukar hoto tare da Silicon Carbide Coating, 8 inch wafer Carrier Featured Image

Takaitaccen Bayani:

Semicera Energy yana ba da cikakkiyar kewayon masu cutarwa da abubuwan graphite waɗanda aka ƙera don maƙallan epitaxy daban-daban.

Ta hanyar haɗin gwiwar dabarun aiki tare da manyan masana'antu OEMs, ƙwararrun kayan aiki, da ƙwarewar masana'antu na ci gaba, Weitai yana ba da ƙira da aka keɓance don biyan takamaiman buƙatun aikace-aikacen ku. Alƙawarinmu don haɓakawa yana tabbatar da cewa kun sami mafi kyawun mafita don buƙatun ku na reactor na epitaxy.

Aika mana imel

Cikakken Bayani

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Bayani

CVD-SiC shafiyana da halaye na uniform tsarin, m abu, high zafin jiki juriya, hadawan abu da iskar shaka juriya, high tsarki, acid&alkali juriya da Organic reagent, tare da barga jiki da sinadaran Properties.

Idan aka kwatanta da kayan aikin graphite mai tsabta, graphite ya fara oxidize a 400C, wanda zai haifar da asarar foda saboda iskar shaka, haifar da gurɓataccen muhalli ga na'urorin da ke kewaye da ɗakunan sarari, da haɓaka ƙazantattun yanayi mai tsafta.
Duk da haka,SiC shafina iya kula da kwanciyar hankali na jiki da sinadarai a digiri 1600, Ana amfani da shi sosai a masana'antar zamani, musamman a masana'antar semiconductor.

Farashin CFGNBHXF

Farashin SFGHBZSF

Babban Siffofin

1 .High tsarki SiC mai rufi graphite

2. Mafi girman juriya na zafi & daidaituwar thermal

3. LafiyaSiC crystal mai rufidon m surface

4. Babban karko a kan tsabtace sinadarai

Babban Takaddun Shafi na CVD-SIC Coatings:

SiC-CVD
Yawan yawa	(g/cc)	3.21
Ƙarfin sassauƙa	(Mpa)	470
Fadada thermal	(10-6/K)	4
Ƙarfafawar thermal	(W/mK)	300

Shiryawa da jigilar kaya

Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora: