SiC Coating Graphite Wafer Susceptor

Takaitaccen Bayani:

Semicera Semiconductor's SiC Coating Graphite Wafer Susceptor yana ba da ingantaccen aikin zafi da dorewa don sarrafa wafer. Dogaro kan Semicera don ci-gaba masu rufin SiC wanda aka tsara don haɓaka inganci da aminci a aikace-aikacen semiconductor.

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Bayani

Semicorex's SiC Wafer Susceptors na MOCVD (Ƙarfe-Organic Chemical Vapor Deposition) an ƙera su don biyan madaidaicin buƙatun hanyoyin jigilar epitaxial. Yin amfani da Silicon Carbide (SiC) mai inganci, waɗannan masu cutarwa suna ba da dorewa da aiki mara misaltuwa a cikin yanayin zafi mai zafi da lalata, yana tabbatar da daidaito da ingantaccen ci gaban kayan semiconductor.

Mabuɗin fasali:

1. Manyan Abubuwan KayaGina daga SiC mai girma, masu ciwon wafer ɗinmu suna nuna keɓancewar yanayin zafi da juriya na sinadarai. Waɗannan kaddarorin suna ba su damar jure matsanancin yanayin tafiyar matakai na MOCVD, gami da yanayin zafi mai zafi da iskar gas mai lalata, tabbatar da tsawon rai da ingantaccen aiki.

2. Daidaitawa a cikin Epitaxial DepositionMadaidaicin injiniyan mu na SiC Wafer Susceptors yana tabbatar da rarraba yanayin zafin jiki iri ɗaya a saman wafer, yana sauƙaƙe daidaitaccen haɓakar haɓakar Layer epitaxial. Wannan madaidaicin yana da mahimmanci don samar da semiconductor tare da ingantattun kayan lantarki.

3. Ingantacciyar DorewaKayan SiC mai ƙarfi yana ba da kyakkyawan juriya ga lalacewa da lalacewa, har ma a ƙarƙashin ci gaba da fallasa yanayin yanayin tsari. Wannan ɗorewa yana rage mitar masu maye gurbin su, rage raguwar lokaci da farashin aiki.