Bayanin Samfura
4h-n 4inch 6inch dia100mm sic iri wafer 1mm kauri don ingot girma
Girman na musamman / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N SIC ingots / Babban tsarki 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS / Customzied as-cut sic wafersProduction 4inch sa 4H-N 1.5mm SIC Wafers don crystal iri
Game da Silicon Carbide (SiC) Crystal
Silicon carbide (SiC), kuma aka sani da carborundum, semiconductor ne mai ɗauke da silicon da carbon tare da dabarar sinadarai SiC. Ana amfani da SiC a cikin na'urorin lantarki na semiconductor waɗanda ke aiki a yanayin zafi mai ƙarfi ko babban ƙarfin lantarki, ko duka biyun.SiC kuma ɗayan mahimman abubuwan LED ne, sanannen substrate don haɓaka na'urorin GaN, kuma yana aiki azaman mai watsa zafi a cikin high- LEDs masu ƙarfi.
Bayani
| Dukiya | 4H-SiC, Crystal Single | 6H-SiC, Crystal Single |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Jerin Tari | ABCB | ABCACB |
| Mohs Hardness | 9.2 | 9.2 |
| Yawan yawa | 3.21 g/cm 3 | 3.21 g/cm 3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Fihirisar Refraction @ 750nm | babu = 2.61 | babu = 2.60 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Ƙarfafa Ƙarfafawa (Nau'in N, 0.02 ohm.cm) | a ~ 4.2 W/cm · K@298K |
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| Ƙarfafa Ƙarfafawa (Semi-insulating) | a ~ 4.9 W/cm · K@298K | a ~ 4.6 W/cm · K@298K |
| Band-gap | 3.23v | 3.02v |
| Filin Lantarki Mai Karye | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
