SemiceraSiC Cantilever Wafer Paddlean tsara shi don biyan buƙatun masana'antar semiconductor na zamani. Wannanwafer paddleyana ba da ingantaccen ƙarfin injiniya da juriya na thermal, wanda ke da mahimmanci don sarrafa wafers a cikin yanayin zafi mai zafi.
Ƙirar cantilever na SiC yana ba da damar daidaitaccen wurin wafer, yana rage haɗarin lalacewa yayin sarrafawa. Matsayinsa mai girma na thermal yana tabbatar da cewa wafer ya kasance barga ko da a cikin matsanancin yanayi, wanda ke da mahimmanci don kiyaye ingantaccen samarwa.
Baya ga fa'idodin tsarin sa, Semicera'sSiC Cantilever Wafer PaddleHakanan yana ba da fa'idodi cikin nauyi da karko. Gine-gine mai sauƙi ya sa ya zama sauƙi don sarrafawa da haɗawa cikin tsarin da ake ciki, yayin da babban kayan SiC mai mahimmanci yana tabbatar da dorewa mai dorewa a ƙarƙashin yanayi mai buƙata.
| Kaddarorin jiki na Silicon Carbide Recrystallized | |
| Dukiya | Mahimmanci Na Musamman |
| Yanayin aiki (°C) | 1600°C (tare da oxygen), 1700°C (rage yanayi) |
| SiC abun ciki | 99.96% |
| Abin ciki na kyauta | <0.1% |
| Yawan yawa | 2.60-2.70 g/cm3 |
| Bayyanar porosity | <16% |
| Ƙarfin matsi | > 600 MPa |
| Ƙarfin lanƙwasa sanyi | 80-90 MPa (20°C) |
| Ƙarfin lanƙwasawa mai zafi | 90-100 MPa (1400°C) |
| Thermal fadada @1500°C | 4.70 10-6/°C |
| Ƙarfin zafin jiki @1200°C | 23 W/m•K |
| Na roba modules | 240 GPA |
| Thermal girgiza juriya | Madalla da kyau |
