SemiceraSilicon Carbide Ceramic Coatingrufin kariya ne mai girma da aka yi da kayan silicon carbide (SiC). A shafi ne yawanci saka a saman da substrate ta CVD ko PVD aiwatar dasiliki carbide barbashi, samar da kyakkyawan juriya na lalata sinadarai da kwanciyar hankali mai zafi. Saboda haka, Silicon Carbide Ceramic Coating ana amfani da ko'ina a cikin mahimman kayan aikin masana'antar semiconductor.
A cikin masana'antar semiconductor,SiC shafizai iya jure matsanancin yanayin zafi har zuwa 1600 ° C, don haka Silicon Carbide Ceramic Coating galibi ana amfani da shi azaman kariya ga kayan aiki ko kayan aiki don hana lalacewa a cikin yanayin zafi mai zafi ko lalata.
A lokaci guda,silicon carbide yumbu rufiiya tsayayya da yashwar acid, alkalis, oxides da sauran sinadaran reagents, kuma yana da high lalata juriya ga iri-iri sinadarai abubuwa. Saboda haka, wannan samfurin ya dace da wurare daban-daban masu lalata a cikin masana'antar semiconductor.
Bugu da ƙari, idan aka kwatanta da sauran kayan yumbura, SiC yana da mafi girma na thermal conductivity kuma yana iya gudanar da zafi yadda ya kamata. Wannan fasalin yana ƙayyade cewa a cikin matakai na semiconductor waɗanda ke buƙatar madaidaicin sarrafa zafin jiki, babban ƙarfin thermal naSilicon Carbide Ceramic Coatingyana taimakawa wajen tarwatsa zafi daidai gwargwado, hana zafi na gida, da kuma tabbatar da cewa na'urar tana aiki a yanayin zafi mafi kyau.
Asalin kaddarorin jiki na CVD sic shafi | |
Dukiya | Mahimmanci Na Musamman |
Tsarin Crystal | FCC β lokaci polycrystalline, yafi (111) daidaitacce |
Yawan yawa | 3.21g/cm³ |
Tauri | 2500 Vickers taurin (500g kaya) |
hatsi SiZe | 2 ~ 10 μm |
Tsaftar Sinadari | 99.99995% |
Ƙarfin zafi | 640kg-1· K-1 |
Zazzabi Sublimation | 2700 ℃ |
Ƙarfin Flexural | 415 MPa RT 4-point |
Modul na Young | 430 Gpa 4pt lankwasa, 1300 ℃ |
Thermal Conductivity | 300 w·m-1· K-1 |
Fadada thermal (CTE) | 4.5×10-6K-1 |