Semicera'sSilicon Carbide Epitaxyan ƙera shi don biyan buƙatun aikace-aikacen semiconductor na zamani. Ta hanyar amfani da ingantattun dabarun haɓaka epitaxial, muna tabbatar da cewa kowane Layer silicon carbide Layer yana nuna ingantaccen ingancin crystalline, daidaito, da ƙarancin ƙarancin lahani. Waɗannan halayen suna da mahimmanci don haɓaka ƙarfin lantarki mai ƙarfi, inda inganci da sarrafa zafin jiki ke da mahimmanci.
TheSilicon Carbide EpitaxyAn inganta tsari a Semicera don samar da yadudduka na epitaxial tare da madaidaicin kauri da sarrafa abubuwan kara kuzari, yana tabbatar da daidaiton aiki a cikin kewayon na'urori. Wannan matakin madaidaicin yana da mahimmanci ga aikace-aikace a cikin motocin lantarki, tsarin makamashi mai sabuntawa, da kuma manyan hanyoyin sadarwa, inda aminci da inganci suke da mahimmanci.
Har ila yau, Semicera'sSilicon Carbide Epitaxyyana ba da ingantaccen ƙarfin wutar lantarki da mafi girman ƙarfin rushewa, yana mai da shi zaɓin da aka fi so don na'urorin da ke aiki ƙarƙashin matsanancin yanayi. Waɗannan kaddarorin suna ba da gudummawa ga tsawon rayuwar na'urar da haɓaka ingantaccen tsarin gabaɗaya, musamman a cikin babban ƙarfi da yanayin zafi.
Semicera kuma yana ba da zaɓuɓɓukan gyare-gyare donSilicon Carbide Epitaxy, ƙyale hanyoyin da aka ƙera waɗanda suka dace da takamaiman buƙatun na'urar. Ko don bincike ko samar da babban sikelin, an tsara matakan mu na epitaxial don tallafawa ƙarni na gaba na sabbin abubuwa na semiconductor, yana ba da damar haɓaka na'urorin lantarki masu ƙarfi, inganci, kuma abin dogaro.
Ta hanyar haɗa fasahar yankan-baki da tsauraran matakan sarrafa inganci, Semicera yana tabbatar da cewa muSilicon Carbide Epitaxysamfurori ba kawai saduwa ba amma sun wuce matsayin masana'antu. Wannan sadaukar da kai ga ƙwaƙƙwara ya sa yadudduka na epitaxial ya zama kyakkyawan tushe don aikace-aikacen semiconductor na ci gaba, yana ba da hanya don ci gaba a cikin kayan lantarki da optoelectronics.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |