Silicon Carbide Epitaxy

Takaitaccen Bayani:

Silicon Carbide Epitaxy- Ingantattun yadudduka na epitaxial waɗanda aka keɓance don aikace-aikacen semiconductor na ci gaba, suna ba da ingantaccen aiki da amincin kayan lantarki da na'urorin optoelectronic.


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Semicera'sSilicon Carbide Epitaxyan ƙera shi don biyan buƙatun aikace-aikacen semiconductor na zamani. Ta hanyar amfani da ingantattun dabarun haɓaka epitaxial, muna tabbatar da cewa kowane Layer silicon carbide Layer yana nuna ingantaccen ingancin crystalline, daidaito, da ƙarancin ƙarancin lahani. Waɗannan halayen suna da mahimmanci don haɓaka ƙarfin lantarki mai ƙarfi, inda inganci da sarrafa zafin jiki ke da mahimmanci.

TheSilicon Carbide EpitaxyAn inganta tsari a Semicera don samar da yadudduka na epitaxial tare da madaidaicin kauri da sarrafa abubuwan kara kuzari, yana tabbatar da daidaiton aiki a cikin kewayon na'urori. Wannan matakin madaidaicin yana da mahimmanci ga aikace-aikace a cikin motocin lantarki, tsarin makamashi mai sabuntawa, da kuma manyan hanyoyin sadarwa, inda aminci da inganci suke da mahimmanci.

Har ila yau, Semicera'sSilicon Carbide Epitaxyyana ba da ingantacciyar ƙarfin wutar lantarki da haɓakar wutar lantarki mai girma, yana mai da shi zaɓin da aka fi so don na'urorin da ke aiki a ƙarƙashin matsanancin yanayi. Waɗannan kaddarorin suna ba da gudummawa ga tsawon rayuwar na'urar da haɓaka ingantaccen tsarin gabaɗaya, musamman a cikin babban ƙarfi da yanayin zafi.

Semicera kuma yana ba da zaɓuɓɓukan gyare-gyare donSilicon Carbide Epitaxy, ƙyale hanyoyin da aka keɓance waɗanda suka dace da takamaiman buƙatun na'urar. Ko don bincike ko samar da babban sikelin, an tsara matakan mu na epitaxial don tallafawa ƙarni na gaba na sabbin abubuwa na semiconductor, yana ba da damar haɓaka na'urorin lantarki masu ƙarfi, inganci, kuma abin dogaro.

Ta hanyar haɗa fasahar yankan-baki da tsauraran matakan sarrafa inganci, Semicera yana tabbatar da cewa muSilicon Carbide Epitaxysamfurori ba kawai saduwa ba amma sun wuce matsayin masana'antu. Wannan sadaukar da kai ga ƙwaƙƙwara ya sa yadudduka na epitaxial ya zama kyakkyawan tushe don aikace-aikacen semiconductor na ci gaba, yana ba da hanya don ci gaba a cikin kayan lantarki da optoelectronics.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ku/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon Tara≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

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SiC wafers

  • Na baya:
  • Na gaba: