Bayani
TheSilicon Carbide (SiC) Wafer Susceptorsdon MOCVD daga semicera an ƙera su don ci gaba da tafiyar matakai na epitaxial, suna ba da kyakkyawan aiki ga duka biyunYa da EpitoxykumaSiC Epitoxyaikace-aikace. Sabuwar dabarar Semicera tana tabbatar da waɗannan masu cutarwa suna da dorewa da inganci, suna ba da kwanciyar hankali da daidaito don ayyukan masana'antu masu mahimmanci.
Injiniya don tallafawa maɗaukakin buƙatunMai Rarraba MOCVDtsarin, waɗannan samfuran suna da yawa, masu dacewa da masu ɗaukar kaya kamar PSS Etching Carrier, ICP Etching Carrier, da RTP Carrier. Sassaucinsu ya sa su dace da manyan masana'antu, gami da waɗanda ke aiki da suLED EpitaxialSusceptor da Monocrystalline Silicon.
Tare da gyare-gyare da yawa, ciki har da Barrel Susceptor da Pancake Susceptor, waɗannan wafer susceptors kuma suna da mahimmanci a cikin ɓangaren hoto, suna tallafawa masana'antu na Photovoltaic. Ga masana'antun semiconductor, iyawar sarrafa GaN akan hanyoyin SiC Epitaxy yana sanya waɗannan masu cutar da ƙimar gaske don tabbatar da fitarwa mai inganci a cikin kewayon aikace-aikace.
Babban Siffofin
1 .High tsarki SiC mai rufi graphite
2. Mafi girman juriya na zafi & daidaituwar thermal
3. LafiyaSiC crystal mai rufidon m surface
4. Babban karko a kan tsabtace sinadarai
Babban Takaddun Shafi na CVD-SIC Coatings:
| SiC-CVD | ||
| Yawan yawa | (g/cc) | 3.21 |
| Ƙarfin sassauƙa | (Mpa) | 470 |
| Fadada thermal | (10-6/K) | 4 |
| Ƙarfafawar thermal | (W/mK) | 300 |
Shiryawa da jigilar kaya
Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora:
| Yawan (Yankuna) | 1-1000 | > 1000 |
| Est. Lokaci (kwanaki) | 30 | Don a yi shawarwari |
