Silicon nitride mai haɗin silikon carbide
Si3N4 bonded SiC yumbu refractory abu, an gauraye da high tsarki SIC lafiya foda da Silicon foda, bayan zamewa simintin hanya, dauki sintered karkashin 1400 ~ 1500 ° C. A lokacin sintering hanya, cike da high tsarki Nitrogen a cikin tanderun, sa'an nan silicon zai amsa tare da Nitrogen da kuma samar da Si3N4, Don haka Si3N4 bonded SiC abu ya hada da silicon nitride (23%) da silicon carbide (75%) a matsayin babban albarkatun kasa. , gauraye da kwayoyin halitta, da siffa ta hanyar cakuda, extrusion ko zubawa, sa'an nan kuma sanya bayan bushewa da nitrogenization.
Features da abũbuwan amfãni:
1.Hrashin haƙurin zafin jiki
2.High thermal watsin da girgiza juriya
3.High ƙarfin injiniya da juriya na abrasion
4.Excellent makamashi yadda ya dace da lalata juriya
Muna samar da ingantattun kayan aikin yumbu na NSiC masu inganci waɗanda ke aiwatar da su
1.Slip simintin
2.Fitowa
3.Uni Axial Pressing
4.Isostatic Dannawa
Taswirar Bayanai
> Haɗin Kan Kemikal | Haka | 75% |
Farashin 3N4 | ≥23% | |
Free Si | 0% | |
Yawan yawa (g/cm3) | 2.70~2.80 | |
Bayyanar porosity (%) | 12~15 | |
Karfin lanƙwasa a 20 ℃ (MPa) | 180~190 | |
Karfin lanƙwasa a 1200 ℃ (MPa) | 207 | |
Karfin lanƙwasa a 1350 ℃ (MPa) | 210 | |
Ƙarfin ƙarfi a 20 ℃ (MPa) | 580 | |
Ƙarfafawar thermal a 1200 ℃ (w/mk) | 19.6 | |
Ƙididdigar faɗaɗawar thermal a1200 ℃(x 10-6/C) | 4.70 | |
Thermal girgiza juriya | Madalla | |
Max. zafin jiki (℃) | 1600 |