Semicera's Silicon On Insulator (SOI) Wafer yana kan gaba wajen haɓaka ƙirar semiconductor, yana ba da ingantaccen keɓewar lantarki da ingantaccen aikin zafi. Tsarin SOI, wanda ya ƙunshi ƙaramin siliki na bakin ciki akan abin rufe fuska, yana ba da fa'idodi masu mahimmanci ga manyan na'urorin lantarki.
An ƙera wafers ɗin mu na SOI don rage ƙarfin ƙarfin parasitic da kwararar ruwa, wanda ke da mahimmanci don haɓaka haɗaɗɗun haɗaɗɗun sauri da ƙarancin ƙarfi. Wannan fasaha ta ci gaba tana tabbatar da cewa na'urori suna aiki da kyau, tare da ingantaccen sauri da rage yawan amfani da makamashi, mahimmanci ga kayan lantarki na zamani.
Hanyoyin masana'antu na ci gaba da Semicera ke aiki suna ba da garantin samar da wafers na SOI tare da ingantacciyar daidaituwa da daidaito. Wannan ingancin yana da mahimmanci ga aikace-aikace a cikin sadarwa, motoci, da na'urorin lantarki na mabukaci, inda ake buƙatar abin dogaro da ingantaccen aiki.
Baya ga fa'idodin wutar lantarkinsu, Semicera's SOI wafers suna ba da ingantaccen rufin zafi, haɓaka ɓarkewar zafi da kwanciyar hankali a cikin manyan na'urori masu ƙarfi da ƙarfi. Wannan fasalin yana da mahimmanci musamman a aikace-aikace waɗanda suka haɗa da haɓakar zafi mai mahimmanci kuma suna buƙatar ingantaccen sarrafa zafi.
Ta zaɓar Silicon na Semicera akan Insulator Wafer, kuna saka hannun jari a cikin samfur wanda ke goyan bayan ci gaban fasaha mai ƙima. Ƙoƙarinmu ga inganci da ƙirƙira yana tabbatar da cewa wafers na SOI ɗinmu sun cika buƙatun masana'antar semiconductor na yau, suna ba da tushe don na'urorin lantarki na gaba.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
