Silicon akan Insulator Wafersdaga Semicera an ƙirƙira su don biyan buƙatun haɓakar manyan ayyuka na samar da mafita na semiconductor. Wafers ɗin mu na SOI suna ba da ingantaccen aikin lantarki da rage ƙarfin na'urar parasitic, yana sa su dace don aikace-aikacen ci gaba kamar na'urorin MEMS, na'urori masu auna firikwensin, da haɗaɗɗun da'irori. Ƙwarewar Semicera a cikin samar da wafer yana tabbatar da cewa kowaneSOI waferyana ba da ingantaccen, sakamako mai inganci don buƙatun fasahar zamani na gaba.
MuSilicon akan Insulator Wafersbayar da ma'auni mafi kyaun tsakanin ingancin farashi da aiki. Tare da farashin wafer na soi yana ƙara yin gasa, waɗannan wafers ana amfani da su sosai a cikin kewayon masana'antu, gami da microelectronics da optoelectronics. Tsarin samar da madaidaicin madaidaicin Semicera yana ba da garantin haɗewar wafer mafi girma da daidaito, yana sa su dace da aikace-aikace iri-iri, daga cavity SOI wafers zuwa daidaitaccen wafern silicon.
Mabuɗin fasali:
•Mafi ingancin wafers na SOI da aka inganta don aiki a cikin MEMS da sauran aikace-aikace.
•Gasa farashin wafer soi don kasuwancin da ke neman ingantattun mafita ba tare da lalata inganci ba.
•Madaidaici don fasahar yankan-baki, yana ba da ingantaccen keɓewar lantarki da inganci a cikin silicon akan tsarin insulator.
MuSilicon akan Insulator Wafersan ƙera su don samar da mafita mai mahimmanci, suna tallafawa haɓaka na gaba na ƙira a cikin fasahar semiconductor. Ko kuna aiki akan ramiSOI wafers, MEMS na'urorin, ko silicon a kan insulator aka gyara, Semicera yana ba da wafers wanda ya dace da mafi girman matsayi a cikin masana'antu.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |