Semicera Silicon Substrates an ƙera su don biyan buƙatun masana'antar semiconductor, suna ba da inganci mara misaltuwa da daidaito. Waɗannan ɓangarorin suna ba da tushe mai dogaro ga aikace-aikace daban-daban, daga haɗaɗɗun da'irori zuwa sel na hotovoltaic, yana tabbatar da ingantaccen aiki da tsawon rai.
Babban tsafta na Semicera Silicon Substrates yana tabbatar da ƙarancin lahani da ingantattun halayen lantarki, waɗanda ke da mahimmanci don samar da ingantaccen kayan lantarki. Wannan matakin tsarki yana taimakawa wajen rage asarar makamashi da inganta ingantaccen na'urorin semiconductor gabaɗaya.
Semicera yana amfani da dabarun masana'antu na zamani don samar da abubuwan siliki tare da daidaito na musamman da laushi. Wannan madaidaicin yana da mahimmanci don samun daidaiton sakamako a ƙirƙira na semiconductor, inda ko da ɗan bambancin zai iya tasiri aikin na'urar da yawan amfanin ƙasa.
Akwai a cikin nau'ikan masu girma dabam da ƙayyadaddun bayanai, Semicera Silicon Substrates suna biyan buƙatun masana'antu da yawa. Ko kuna haɓaka microprocessors na yankan-baki ko fale-falen hasken rana, waɗannan sifofin suna ba da sassauci da amincin da ake buƙata don takamaiman aikace-aikacenku.
An sadaukar da Semicera don tallafawa ƙira da inganci a cikin masana'antar semiconductor. Ta hanyar samar da siliki mai inganci, muna bawa masana'antun damar tura iyakokin fasaha, suna isar da samfuran da suka dace da buƙatun kasuwa. Amince Semicera don samar da lantarki na zamani da mafita na hoto.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
