Silicon Thermal Oxide Wafer

Takaitaccen Bayani:

Semicera Energy Technology Co., Ltd shine babban mai ba da kaya wanda ya ƙware a cikin wafer da ci-gaba na kayan masarufi. An sadaukar da mu don samar da ingantaccen inganci, abin dogaro, da sabbin samfura zuwa masana'antar semiconductor, masana'antar photovoltaic da sauran fannoni masu alaƙa.

Layin samfurinmu ya haɗa da samfuran graphite mai rufi na SiC/TaC da samfuran yumbu, wanda ya ƙunshi abubuwa daban-daban kamar silicon carbide, silicon nitride, da aluminum oxide da sauransu.

A halin yanzu, mu ne kawai masana'anta don samar da tsabta 99.9999% SiC shafi da 99.9% recrystallized silicon carbide. Max SiC shafi tsawon za mu iya yi 2640mm.

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Cikakken Bayani

Tags samfurin

Layer oxide na thermal oxide na wafer siliki shine Layer oxide ko silica Layer da aka kafa akan saman dandali na wafer siliki ƙarƙashin yanayin zafi mai zafi tare da wakili mai oxidizing.The thermal oxide Layer na silicon wafer yawanci girma a cikin wani kwance tube makera, kuma girma zafin jiki kewayon kullum 900 ° C ~ 1200 ° C, kuma akwai biyu girma halaye na "rigar hadawan abu da iskar shaka" da "bushe hadawan abu da iskar shaka". Layer oxide na thermal oxide Layer ne mai “girma” wanda ke da girman homogeneity kuma mafi girman ƙarfin dielectric fiye da na CVD da aka ajiye oxide Layer. Thermal oxide Layer ne mai kyau dielectric Layer a matsayin insulator. A yawancin na'urorin da ke tushen silicon, Layer oxide na thermal oxide yana taka muhimmiyar rawa a matsayin doping blocking Layer da surface dielectric.

Tukwici: Nau'in Oxidation

1. Dry oxidation

Silikon yana amsawa tare da iskar oxygen, kuma Layer oxide yana motsawa zuwa layin basal. Dry hadawan abu da iskar shaka bukatar a za'ayi a zazzabi na 850 zuwa 1200 ° C, da kuma girma kudi ne low, wanda za a iya amfani da MOS rufi kofa girma. Lokacin da babban inganci, matsananci-bakin ciki silicon oxide Layer ake bukata, busassun hadawan abu da iskar shaka an fi son a kan rigar hadawan abu da iskar shaka.

Dry hadawan abu da iskar shaka iya aiki: 15nm ~ 300nm (150A ~ 3000A)

2. Rigar oxygenation

Wannan hanyar tana amfani da cakuda hydrogen da iskar oxygen mai tsafta don ƙonewa a ~ 1000 ° C, don haka samar da tururin ruwa don samar da Layer oxide. Ko da yake rigar hadawan abu da iskar shaka ba zai iya samar da matsayin high quality hadawan abu da iskar shaka Layer a matsayin busassun hadawan abu da iskar shaka, amma isa da za a yi amfani da matsayin kadaici yankin, idan aka kwatanta da bushe hadawan abu da iskar shaka yana da fa'ida bayyananne shi ne cewa yana da mafi girma girma kudi.

Rigar hadawan abu da iskar shaka iya aiki: 50nm ~ 15µm (500A ~ 15µm)

3. Hanyar bushewa - hanyar rigar - hanyar bushewa

A cikin wannan hanyar, ana fitar da iskar oxygen mai bushe a cikin tanderun oxygen a farkon matakin, ana ƙara hydrogen a tsakiyar oxidation, kuma ana adana hydrogen a ƙarshen don ci gaba da iskar oxygen tare da busasshiyar iskar oxygen don samar da tsarin oxidation mai yawa fiye da da na kowa rigar hadawan abu da iskar shaka tsari a cikin nau'i na ruwa tururi.

4. TEOS oxidation

Fasahar Oxidation 氧化工艺	Rigar oxidation ko Dry oxidation 湿法氧化/干法氧化
Diamita 硅片直径	2" / 3" / 4" / 6" / 8" / 12" 英寸
Kauri Oxide 氧化层厚度	100 Å ~ 15µm 10nm ~ 15µm
Hakuri 公差范围	+/- 5%
Surface 表面	Single Side Oxidation (SSO) / Biyu Side Oxidation (DSO) 单面氧化/双面氧化
Tanderu 氧化炉类型	A kwance bututu makera 水平管式炉
Gas 气体类型	Hydrogen da Oxygen gas 氢氧混合气体
Zazzabi 氧化温度	900 ℃ ~ 1200 ℃ 900 ~ 1200摄氏度
Indexididdigar refractive 折射率	1.456