Semicera Silicon Wafers an ƙera su da kyau don yin aiki a matsayin tushe don ɗimbin na'urorin semiconductor, daga microprocessors zuwa sel na hotovoltaic. Waɗannan wafers an ƙera su tare da ingantaccen daidaito da tsabta, suna tabbatar da kyakkyawan aiki a aikace-aikacen lantarki daban-daban.
Kerarre ta amfani da ingantattun dabaru, Semicera Silicon Wafers suna baje koli na musamman da daidaito, waɗanda ke da mahimmanci don samun babban rabo a masana'antar semiconductor. Wannan matakin madaidaicin yana taimakawa wajen rage lahani da haɓaka ingantaccen kayan aikin lantarki gabaɗaya.
Mafi kyawun ingancin Semicera Silicon Wafers yana bayyana a cikin halayen lantarki, waɗanda ke ba da gudummawa ga haɓaka aikin na'urorin semiconductor. Tare da ƙananan matakan ƙazanta da ingancin kristal, waɗannan wafers suna ba da ingantaccen dandamali don haɓaka kayan aikin lantarki mai ƙarfi.
Akwai a cikin girma dabam dabam da ƙayyadaddun bayanai, Semicera Silicon Wafers za a iya keɓance su don biyan takamaiman buƙatun masana'antu daban-daban, gami da kwamfuta, sadarwa, da makamashi mai sabuntawa. Ko don manyan masana'antu ko bincike na musamman, waɗannan wafers suna ba da ingantaccen sakamako.
Semicera ta himmatu wajen tallafawa haɓakawa da haɓaka masana'antar semiconductor ta hanyar samar da ingantattun siliki masu inganci waɗanda suka dace da mafi girman matsayin masana'antu. Tare da mai da hankali kan daidaito da aminci, Semicera yana bawa masana'antun damar tura iyakokin fasaha, tabbatar da samfuran su kasance a sahun gaba na kasuwa.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |