Semicera's SiN Ceramics Plain Substrates yana ba da ingantaccen aiki don aikace-aikacen lantarki da masana'antu iri-iri. An san su don kyakkyawan ƙarfin wutar lantarki da ƙarfin injiniyoyi, waɗannan kayan aikin suna tabbatar da ingantaccen aiki a cikin yanayin da ake buƙata.
Kayan mu na SiN (Silicon Nitride) an ƙera su don kula da matsanancin yanayin zafi da yanayin damuwa, yana sa su dace da na'urorin lantarki masu ƙarfi da na'urori masu haɓakawa. Ƙarfinsu da juriya ga girgizar zafi ya sa su dace don amfani a aikace-aikace inda aminci da aiki ke da mahimmanci.
Madaidaicin matakan masana'antu na Semicera yana tabbatar da cewa kowane madaidaicin madauri na fili ya dace da ingantattun matakan inganci. Wannan yana haifar da ma'auni tare da daidaiton kauri da ingancin saman, waɗanda suke da mahimmanci don cimma kyakkyawan aiki a cikin majalisai da tsarin lantarki.
Baya ga fa'idodin zafi da injina, SiN Ceramics Plain Substrates suna ba da ingantattun kaddarorin wutar lantarki. Wannan yana tabbatar da ƙaramin tsangwama na lantarki kuma yana ba da gudummawa ga cikakkiyar kwanciyar hankali da ingancin kayan aikin lantarki, haɓaka tsawon rayuwarsu.
Ta zaɓin Semicera's SiN Ceramics Plain Substrates, kuna zabar samfur wanda ya haɗu da haɓakar kimiyyar kayan aiki tare da masana'anta na musamman. Ƙaddamar da mu ga inganci da ƙirƙira yana ba da garantin cewa ka karɓi abubuwan da suka dace da mafi girman ma'auni na masana'antu da goyan bayan nasarar ayyukan fasaha na ci gaba.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |