SiN Ceramics Plain Substrates

Takaitaccen Bayani:

Semicera's SiN Ceramics Plain Substrates suna ba da ingantaccen yanayin zafi da aikin injiniya don aikace-aikacen buƙatu masu yawa. Ƙirƙirar ƙirƙira don ƙwaƙƙwaran ƙarfi da dogaro, waɗannan abubuwan da suka dace sun dace don na'urorin lantarki na ci gaba. Zaɓi Semicera don ingantattun hanyoyin samar da yumbu na SiN waɗanda suka dace da bukatunku.


Cikakken Bayani

Tags samfurin

Semicera's SiN Ceramics Plain Substrates yana ba da ingantaccen aiki don aikace-aikacen lantarki da masana'antu iri-iri. An san su don kyakkyawan ƙarfin wutar lantarki da ƙarfin injiniyoyi, waɗannan kayan aikin suna tabbatar da ingantaccen aiki a cikin yanayin da ake buƙata.

Kayan mu na SiN (Silicon Nitride) an ƙera su don kula da matsanancin yanayin zafi da yanayin damuwa, yana sa su dace da na'urorin lantarki masu ƙarfi da na'urori masu haɓakawa. Ƙarfinsu da juriya ga girgizar zafi ya sa su dace don amfani a aikace-aikace inda aminci da aiki ke da mahimmanci.

Madaidaicin matakan masana'antu na Semicera yana tabbatar da cewa kowane madaidaicin madauri na fili ya dace da ingantattun matakan inganci. Wannan yana haifar da ma'auni tare da daidaiton kauri da ingancin saman, waɗanda suke da mahimmanci don cimma kyakkyawan aiki a cikin majalisai da tsarin lantarki.

Baya ga fa'idodin zafi da injina, SiN Ceramics Plain Substrates suna ba da ingantattun kaddarorin wutar lantarki. Wannan yana tabbatar da ƙaramin tsangwama na lantarki kuma yana ba da gudummawa ga cikakkiyar kwanciyar hankali da ingancin kayan aikin lantarki, haɓaka tsawon rayuwarsu.

Ta zaɓin Semicera's SiN Ceramics Plain Substrates, kuna zabar samfur wanda ya haɗu da haɓakar kimiyyar kayan aiki tare da masana'anta na musamman. Ƙaddamar da mu ga inganci da ƙirƙira yana ba da garantin cewa ka karɓi abubuwan da suka dace da mafi girman ma'auni na masana'antu da goyan bayan nasarar ayyukan fasaha na ci gaba.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ku/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon Tara≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

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SiC wafers

  • Na baya:
  • Na gaba: