SOI Wafer Silicon Akan Insulator

Takaitaccen Bayani:

Semicera's SOI Wafer (Silicon On Insulator) yana ba da keɓancewar lantarki da aiki don aikace-aikacen semiconductor na ci gaba. Injiniya don ingantaccen yanayin zafi da ƙarfin lantarki, waɗannan wafers sun dace don haɗaɗɗun da'irori masu girma. Zaɓi Semicera don inganci da aminci a cikin fasahar wafer SOI.


Cikakken Bayani

Tags samfurin

Semicera's SOI Wafer (Silicon On Insulator) an ƙera shi don sadar da keɓancewar wutar lantarki da aikin zafi. Wannan sabon tsarin wafer, wanda ke nuna ma'aunin siliki akan rufin rufi, yana tabbatar da ingantaccen aikin na'urar da rage yawan wutar lantarki, yana mai da shi manufa don aikace-aikacen fasaha iri-iri.

Wafers ɗin mu na SOI suna ba da fa'idodi na musamman don haɗaɗɗun da'irori ta hanyar rage ƙarfin parasitic da haɓaka saurin na'urar da inganci. Wannan yana da mahimmanci ga kayan lantarki na zamani, inda babban aiki da ingantaccen makamashi ke da mahimmanci ga mabukaci da aikace-aikacen masana'antu.

Semicera yana amfani da ingantattun dabarun masana'antu don samar da wafers na SOI tare da daidaiton inganci da aminci. Wadannan wafers suna ba da kyakkyawar kariya ta zafi, suna sa su dace da amfani a cikin yanayin da ke haifar da zafi mai zafi, kamar a cikin manyan na'urorin lantarki da tsarin sarrafa wutar lantarki.

Yin amfani da wafers na SOI a cikin ƙirƙira semiconductor yana ba da damar haɓaka ƙananan guntu, sauri, kuma mafi aminci. Ƙaddamar da Semicera ga ingantacciyar injiniya yana tabbatar da cewa wafers ɗin mu na SOI sun cika manyan ma'auni da ake buƙata don fasahohin zamani a fannoni kamar sadarwa, motoci, da na'urorin lantarki.

Zaɓin SOI Wafer na Semicera yana nufin saka hannun jari a cikin samfur wanda ke tallafawa ci gaban fasahar lantarki da microelectronic. An ƙera wafers ɗin mu don samar da ingantaccen aiki da dorewa, yana ba da gudummawa ga nasarar manyan ayyukan fasaha da tabbatar da cewa kun kasance a sahun gaba na ƙirƙira.

Abubuwa

Production

Bincike

Dummy

Crystal Parameters

Polytype

4H

Kuskuren daidaita yanayin saman

<11-20>4±0.15°

Ma'aunin Wutar Lantarki

Dopant

n-nau'in Nitrogen

Resistivity

0.015-0.025ohm · cm

Ma'aunin injina

Diamita

150.0 ± 0.2mm

Kauri

350± 25 μm

Matsakaicin firamare

[1-100]±5°

Tsawon lebur na farko

47.5 ± 1.5mm

Filayen sakandare

Babu

TTV

≤5m ku

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ruku'u

- 15 μm ~ 15 μm

- 35 μm ~ 35 μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Gaba (Si-face) rashin ƙarfi (AFM)

Ra≤0.2nm (5μm*5μm)

Tsarin

Yawan bututu

<1 ya/cm2

<10 a/cm2

<15 ku/cm2

Karfe najasa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ingancin Gaba

Gaba

Si

Ƙarshen saman

Farashin CMP

Barbashi

≤60ea/wafer (size≥0.3μm)

NA

Scratches

≤5ea/mm. Tarin tsayin ≤ Diamita

Tsawon tsayi≤2*Diamita

NA

Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa

Babu

NA

Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti

Babu

Yankunan polytype

Babu

Tarin yanki≤20%

Tarin yanki≤30%

Alamar Laser ta gaba

Babu

Kyakkyawan Baya

Baya gamawa

C-face CMP

Scratches

≤5ea/mm, Tsawon tarawa≤2* Diamita

NA

Lalacewar baya (guntuwar baki/indents)

Babu

Baƙar fata

Ra≤0.2nm (5μm*5μm)

Alamar Laser na baya

1 mm (daga saman gefen)

Gefen

Gefen

Chamfer

Marufi

Marufi

Epi- shirye tare da marufi

Marufin kaset mai yawa-wafer

* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD.

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SiC wafers

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