Semicera's SOI Wafer (Silicon On Insulator) an ƙera shi don sadar da keɓancewar wutar lantarki da aikin zafi. Wannan sabon tsarin wafer, wanda ke nuna ma'aunin siliki akan rufin rufi, yana tabbatar da ingantaccen aikin na'urar da rage yawan wutar lantarki, yana mai da shi manufa don aikace-aikacen fasaha iri-iri.
Wafers ɗin mu na SOI suna ba da fa'idodi na musamman don haɗaɗɗun da'irori ta hanyar rage ƙarfin parasitic da haɓaka saurin na'urar da inganci. Wannan yana da mahimmanci ga kayan lantarki na zamani, inda babban aiki da ingantaccen makamashi ke da mahimmanci ga mabukaci da aikace-aikacen masana'antu.
Semicera yana amfani da ingantattun dabarun masana'antu don samar da wafers na SOI tare da daidaiton inganci da aminci. Wadannan wafers suna ba da kyakkyawar kariya ta zafi, suna sa su dace da amfani a cikin yanayin da ke haifar da zafi mai zafi, kamar a cikin manyan na'urorin lantarki da tsarin sarrafa wutar lantarki.
Yin amfani da wafers na SOI a cikin ƙirƙira semiconductor yana ba da damar haɓaka ƙananan guntu, sauri, kuma mafi aminci. Ƙaddamar da Semicera ga ingantacciyar injiniya yana tabbatar da cewa wafers ɗin mu na SOI sun cika manyan ma'auni da ake buƙata don fasahohin zamani a fannoni kamar sadarwa, motoci, da na'urorin lantarki.
Zaɓin SOI Wafer na Semicera yana nufin saka hannun jari a cikin samfur wanda ke tallafawa ci gaban fasahar lantarki da microelectronic. An ƙera wafers ɗin mu don samar da ingantaccen aiki da dorewa, yana ba da gudummawa ga nasarar manyan ayyukan fasaha da tabbatar da cewa kun kasance a sahun gaba na ƙirƙira.
Abubuwa | Production | Bincike | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
Ma'aunin Wutar Lantarki | |||
Dopant | n-nau'in Nitrogen | ||
Resistivity | 0.015-0.025ohm · cm | ||
Ma'aunin injina | |||
Diamita | 150.0 ± 0.2mm | ||
Kauri | 350± 25 μm | ||
Matsakaicin firamare | [1-100]±5° | ||
Tsawon lebur na farko | 47.5 ± 1.5mm | ||
Filayen sakandare | Babu | ||
TTV | ≤5m ku | ≤10 μm | ≤15 μm |
LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
Tsarin | |||
Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
Karfe najasa | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Ingancin Gaba | |||
Gaba | Si | ||
Ƙarshen saman | Farashin CMP | ||
Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
Alamar Laser ta gaba | Babu | ||
Kyakkyawan Baya | |||
Baya gamawa | C-face CMP | ||
Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
Lalacewar baya (guntuwar baki/indents) | Babu | ||
Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
Alamar Laser na baya | 1 mm (daga saman gefen) | ||
Gefen | |||
Gefen | Chamfer | ||
Marufi | |||
Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
* Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. |