Semicera ya gabatar daWafer Cassette Carrier, Magani mai mahimmanci don amintacce da ingantaccen kulawa na wafers semiconductor. An ƙera wannan mai ɗaukar kaya don saduwa da ƙaƙƙarfan buƙatun masana'antar semiconductor, tabbatar da kariya da amincin wafers ɗin ku a duk lokacin aikin masana'anta.
Mabuɗin fasali:
•Ƙarfafa Gina:TheWafer Cassette Carrieran gina shi daga ingantattun kayan aiki masu ɗorewa waɗanda ke jure wa ƙaƙƙarfan mahalli na semiconductor, samar da ingantaccen kariya daga gurɓatawa da lalacewa ta jiki.
•Daidaitaccen Daidaitawa:An ƙera shi don daidaitaccen jeri na wafer, wannan mai ɗaukar kaya yana tabbatar da cewa ana riƙe wafer a wuri mai aminci, yana rage haɗarin rashin daidaituwa ko lalacewa yayin jigilar kaya.
•Sauƙin Gudanarwa:An tsara Ergonomically don sauƙin amfani, mai ɗaukar kaya yana sauƙaƙa aikin lodi da sauke kaya, inganta ingantaccen aiki a cikin mahalli mai tsabta.
•Daidaituwa:Mai jituwa tare da nau'ikan nau'ikan nau'ikan wafer da yawa, yana mai da shi dacewa don buƙatun masana'antar semiconductor iri-iri.
Ƙware kariya mara misaltuwa da dacewa tare da Semicera'sWafer Cassette Carrier. An ƙirƙiri mai ɗaukar nauyin mu don saduwa da mafi girman matsayin masana'antar semiconductor, yana tabbatar da cewa wafer ɗin ku ya kasance cikin kyakkyawan yanayi daga farko zuwa ƙarshe. Amince Semicera don sadar da inganci da amincin da kuke buƙata don mafi mahimmancin matakanku.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
