Semicera's 4 Inch N-type SiC Substrates an ƙera su don saduwa da ma'auni na masana'antar semiconductor. Waɗannan kayan aikin suna ba da tushe mai girma don aikace-aikacen lantarki da yawa, suna ba da ƙayyadaddun ƙayyadaddun ƙayyadaddun abubuwa da kaddarorin thermal.
Nau'in nau'in doping na waɗannan sinadarai na SiC yana haɓaka haɓakar wutar lantarki, yana mai da su dacewa musamman don aikace-aikacen ƙarfi da ƙarfi. Wannan kadarar tana ba da damar ingantaccen aiki na na'urori kamar diodes, transistor, da amplifiers, inda rage asarar makamashi ke da mahimmanci.
Semicera yana amfani da hanyoyin masana'antu na zamani don tabbatar da cewa kowane yanki yana nuna kyakkyawan ingancin saman da daidaito. Wannan madaidaicin yana da mahimmanci ga aikace-aikace a cikin wutar lantarki, na'urorin microwave, da sauran fasahohin da ke buƙatar ingantaccen aiki a ƙarƙashin matsanancin yanayi.
Haɗa nau'in SiC na Semicera's N a cikin layin samarwa ku yana nufin fa'ida daga kayan da ke ba da ɓarkewar zafi da kwanciyar hankali na lantarki. Waɗannan ɓangarorin suna da kyau don ƙirƙirar abubuwan da ke buƙatar dorewa da inganci, kamar tsarin jujjuya wutar lantarki da masu haɓaka RF.
Ta zaɓar Semicera's 4 Inch N-type SiC Substrates, kuna saka hannun jari a cikin samfur wanda ya haɗu da sabbin kayan kimiyyar kayan fasaha tare da ƙwararrun ƙwararrun sana'a. Semicera ya ci gaba da jagorantar masana'antu ta hanyar samar da mafita wanda ke tallafawa ci gaban fasahar fasahar zamani, yana tabbatar da babban aiki da aminci.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ku/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabas/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon Tara≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
