SOI Wafers

Takaitaccen Bayani:

Wafer SOI wani tsari ne mai kama da sanwici tare da yadudduka uku;Ciki har da saman saman (Layin na'ura), tsakiyar layin oxygen da aka binne (don rufin SiO2 mai rufewa) da ƙasan ƙasa (siliki mai girma).Ana samar da wafers na SOI ta hanyar amfani da hanyar SIMOX da fasahar haɗin gwiwar wafer, wanda ke ba da damar mafi ƙarancin na'ura da ingantaccen yadudduka, kauri iri ɗaya da ƙarancin lahani.

Aika mana imel

Cikakken Bayani

Tags samfurin

SOI Wafers (1)

Filin aikace-aikace

1. High-gudun hadedde kewaye

2. Na'urorin Microwave

3. High zafin jiki hadedde kewaye

4. Na'urorin wuta

5. Ƙarƙashin wutar lantarki da aka haɗa

6. MAZA

7. Low ƙarfin lantarki hadedde kewaye

Abu		Hujja
Gabaɗaya	Wafer Diamita 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Baka/Warp 翘曲度(	<10um
	Barbashi 颗粒度(	0.3am <30ea
	Flat / daraja 定位边/定位槽	Flat ko Daraja
	Ƙarƙashin Ƙarfi 边缘去除(mm)	/
Layer na'ura 器件层	Nau'in-Layin Na'ura/Dopant 器件层掺杂类型	N-Nau'i/P-Nau'in B/ P/ Sb/A
	Gabatar da na'ura-Layer 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Kauri-Layin Na'ura 器件层厚度(um)	0.1 ~ 300
	Resistivity Layer-Layer 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Barbashi-Layin Na'ura 器件层颗粒度(	<30ea@0.3
	Na'urar Layer TTV 器件层TTV(	<10um
	Ƙarshen Layer Na'ura 器件层表面处理	goge
Akwatin	Buried Thermal Oxide Kauri 埋氧层厚度(um)	50nm (500Å) ~ 15um
Hannun Layer 衬底	Hannun Nau'in Wafer/Dopant 衬底层类型	N-Nau'i/P-Nau'in B/ P/ Sb/A
	Hannun Hanyar Wafer 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Hannun Resistivity na Wafer 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Sarrafa Kauri Wafer 衬底厚度(um)	>100um
	Karɓar Wafer 衬底表面处理	goge
SOI wafers na ƙayyadaddun ƙayyadaddun manufa ana iya keɓance su bisa ga buƙatun abokin ciniki.