Semicera's 4”6” Babban Tsarkake Semi-Insulating SiC Ingots an ƙera su don saduwa da ingantattun ƙa'idodi na masana'antar semiconductor. Ana samar da waɗannan ingots tare da mai da hankali kan tsabta da daidaito, suna sa su zama zaɓi mai kyau don aikace-aikace masu ƙarfi da ƙananan mita inda aikin ya kasance mafi mahimmanci.
Keɓaɓɓen kaddarorin waɗannan ingots na SiC, gami da babban ƙarfin zafin jiki da ingantaccen ƙarfin lantarki, sun sa su dace musamman don amfani da na'urorin lantarki da na'urorin microwave. Halin da suke da shi na tsaka-tsaki yana ba da damar yin amfani da zafi mai mahimmanci da ƙananan tsangwama na lantarki, wanda zai haifar da mafi inganci kuma abin dogara.
Semicera yana amfani da tsarin masana'antu na zamani don samar da ingots tare da ingantacciyar ingancin crystal da daidaito. Wannan madaidaicin yana tabbatar da cewa kowane ingot za a iya dogara da shi a yi amfani da shi a cikin aikace-aikace masu mahimmanci, irin su amplifiers masu girma, diodes laser, da sauran na'urorin optoelectronic.
Akwai a duka girman 4-inch da 6-inch, Semicera's SiC ingots suna ba da sassaucin da ake buƙata don ma'aunin samarwa daban-daban da buƙatun fasaha. Ko don bincike da haɓakawa ko samarwa da yawa, waɗannan ingots suna ba da aiki da dorewa waɗanda tsarin lantarki na zamani ke buƙata.
Ta zabar Semicera's High Purity Semi-Insulating SiC Ingots, kuna saka hannun jari a cikin samfur wanda ya haɗu da haɓakar kimiyyar abu tare da ƙwarewar masana'anta mara misaltuwa. An sadaukar da Semicera don tallafawa ƙirƙira da haɓaka masana'antar semiconductor, tana ba da kayan da ke ba da damar haɓaka na'urorin lantarki masu yankewa.
| Abubuwa | Production | Bincike | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kuskuren daidaita yanayin saman | <11-20>4±0.15° | ||
| Ma'aunin Wutar Lantarki | |||
| Dopant | n-nau'in Nitrogen | ||
| Resistivity | 0.015-0.025ohm · cm | ||
| Ma'aunin injina | |||
| Diamita | 150.0 ± 0.2mm | ||
| Kauri | 350± 25 μm | ||
| Matsakaicin firamare | [1-100]±5° | ||
| Tsawon lebur na farko | 47.5 ± 1.5mm | ||
| Filayen sakandare | Babu | ||
| TTV | ≤5m ku | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm (5mm*5mm) | ≤5 μm (5mm*5mm) | ≤10 μm (5mm*5mm) |
| Ruku'u | - 15 μm ~ 15 μm | - 35 μm ~ 35 μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Gaba (Si-face) rashin ƙarfi (AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Tsarin | |||
| Yawan bututu | <1 ya/cm2 | <10 a/cm2 | <15 ku/cm2 |
| Karfe najasa | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Ingancin Gaba | |||
| Gaba | Si | ||
| Ƙarshen saman | Farashin CMP | ||
| Barbashi | ≤60ea/wafer (size≥0.3μm) | NA | |
| Scratches | ≤5ea/mm. Tarin tsayin ≤ Diamita | Tsawon tsayi≤2*Diamita | NA |
| Bawon lemu/ramuka/tabo/tabo/ fasa/kamuwa | Babu | NA | |
| Gefen kwakwalwan kwamfuta / indents / karaya / hex faranti | Babu | ||
| Yankunan polytype | Babu | Tarin yanki≤20% | Tarin yanki≤30% |
| Alamar Laser ta gaba | Babu | ||
| Kyakkyawan Baya | |||
| Baya gamawa | C-face CMP | ||
| Scratches | ≤5ea/mm, Tsawon tarawa≤2* Diamita | NA | |
| Lalacewar baya (guntuwar baki/indents) | Babu | ||
| Baƙar fata | Ra≤0.2nm (5μm*5μm) | ||
| Alamar Laser na baya | 1 mm (daga saman gefen) | ||
| Gefen | |||
| Gefen | Chamfer | ||
| Marufi | |||
| Marufi | Epi- shirye tare da marufi Marufin kaset mai yawa-wafer | ||
| * Bayanan kula: "NA" yana nufin babu buƙatar Abubuwan da ba a ambata ba suna iya komawa zuwa SEMI-STD. | |||
