CVD SiC Coating Epitaxial Deposition A cikin Epitaxial Reactor System

Takaitaccen Bayani:

Semicera yana ba da ɗimbin kewayon susceptors da kayan aikin graphite waɗanda aka ƙera don maƙallan epitaxy daban-daban.

Ta hanyar dabarun haɗin gwiwa tare da OEM-manyan masana'antu, ƙwararrun kayan aiki, da ƙwarewar masana'antu na ci gaba, Semicera yana ba da ƙira da aka keɓance don biyan takamaiman buƙatun aikace-aikacen ku. Alƙawarinmu don haɓakawa yana tabbatar da cewa kun sami mafi kyawun mafita don buƙatun ku na reactor na epitaxy.

Aika mana imel

Cikakken Bayani

Tags samfurin

Kamfaninmu yana bayarwaSiC shafiaiwatar da ayyuka a saman graphite, tukwane da sauran kayan ta hanyar CVD, don haka iskar gas na musamman da ke ɗauke da carbon da silicon na iya amsawa a babban zafin jiki don samun ƙwayoyin Sic masu tsafta, waɗanda za a iya ajiye su a saman kayan da aka rufe don samar daSiC kariya Layerga nau'in ganga hy pnotic.

Babban fasali:

1 .High tsarki SiC mai rufi graphite

2. Mafi girman juriya na zafi & daidaituwar thermal

3. LafiyaSiC crystal mai rufidon m surface

4. Babban karko a kan tsabtace sinadarai

Ajiyewar CVD Epitaxial A cikin Reactor Barrel

Babban Bayani naCVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal	FCC β lokaci
Yawan yawa	g/cm ³	3.21
Tauri	Vickers taurin	2500
Girman hatsi	μm	2 ~ 10
Tsaftar Sinadari	%	99.99995
Ƙarfin zafi	J·k-1 · K-1	640
Zazzabi Sublimation	℃	2700
Ƙarfin Felexural	MPa (RT 4-maki)	415
Modul na Young	Gpa (4pt lankwasa, 1300 ℃)	430
Ƙarfafa Ƙarfafawa (CTE)	10-6K-1	4.5
Ƙarfafawar thermal	(W/mK)	300