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Semiconductor Epitaxial Reactor tare da SiC Coating a cikin Semiconductor

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  • Semiconductor Epitaxial Reactor tare da SiC Coating a cikin Semiconductor

Takaitaccen Bayani:

Semicera yana ba da ɗimbin kewayon susceptors da kayan aikin graphite waɗanda aka ƙera don maƙallan epitaxy daban-daban.

Ta hanyar dabarun haɗin gwiwa tare da OEM-manyan masana'antu, ƙwararrun kayan aiki, da ƙwarewar masana'antu na ci gaba, Semicera yana ba da ƙira da aka keɓance don biyan takamaiman buƙatun aikace-aikacen ku.Alƙawarinmu na haɓakawa yana tabbatar da cewa kun sami ingantattun mafita don buƙatun ku na reactor na epitaxy.

 

Cikakken Bayani

Tags samfurin

Kamfaninmu yana samarwaSiC shafiaiwatar da ayyuka a saman graphite, tukwane da sauran kayan ta hanyar CVD, don haka iskar gas na musamman da ke ɗauke da carbon da silicon na iya amsawa a babban zafin jiki don samun ƙwayoyin Sic masu tsabta, waɗanda za a iya ajiye su a saman kayan da aka rufe don samar daSiC kariya Layerga epitaxy ganga irin hy pnotic.

 

Babban fasali:

1 .High tsarki SiC mai rufi graphite

2. Mafi girman juriya na zafi & daidaituwar thermal

3. LafiyaSiC crystal mai rufidon m surface

4. Babban karko a kan tsabtace sinadarai

 
Barrel Susceptor tare da SiC Coating a Semiconductor

Babban Bayani naCVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal FCC β lokaci
Yawan yawa g/cm ³ 3.21
Tauri Vickers taurin 2500
Girman hatsi μm 2 ~ 10
Tsaftar Sinadari % 99.99995
Ƙarfin zafi J·k-1 · K-1 640
Zazzabi Sublimation ℃ 2700
Ƙarfin Felexural MPa (RT 4-maki) 415
Modul na Young Gpa (4pt lankwasa, 1300 ℃) 430
Fadada thermal (CTE) 10-6K-1 4.5
Ƙarfafawar thermal (W/mK) 300

 

 
2--cvd-sic-tsarki---99-99995-_60366
5----sic-crystal_242127
Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
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