GaAs substrates sun kasu kashi conductive da Semi-insulating, wanda ake amfani da ko'ina a Laser (LD), semiconductor haske-emitting diode (LED), kusa-infrared Laser, jimla da high-ikon Laser da high-ingancin hasken rana bangarori. HEMT da HBT kwakwalwan kwamfuta don radar, microwave, kalaman millimeter ko kwamfutoci masu saurin gudu da hanyoyin sadarwa; Na'urorin mitar rediyo don sadarwar mara waya, 4G, 5G, sadarwar tauraron dan adam, WLAN.
Kwanan nan, gallium arsenide substrates suma sun sami babban ci gaba a cikin mini-LED, Micro-LED, da jajayen LED, kuma ana amfani dasu sosai a cikin na'urorin sawa na AR/VR.
| Diamita | 50mm | 75mm | 100mm | 150mm |
| Hanyar Girma | LEC液封直拉法 |
| Kauri Wafer | 350 ~ 625 ku |
| Gabatarwa | <100> / <111> / <110> ko wasu |
| Nau'in Gudanarwa | P - nau'in / N - nau'in / Semi-insulating |
| Nau'in / Dopant | Zn / Si / undoped |
| Tattaunawar Mai ɗaukar kaya | 1E17 ~ 5E19 cm-3 |
| Resistivity a RT | ≥1E7 don SI |
| Motsi | ≥4000 |
| EPD (Etch Pit Density) | 100-1E5 |
| TTV | ≤10 ku |
| Baka / Warp | ≤20 ku |
| Ƙarshen Sama | DSP/SSP |
| Alamar Laser |
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| Daraja | Epi goge grade/makin inji |










