Silicon Carbide Substrates | SiC Wafers

Takaitaccen Bayani:

WeiTai Energy Technology Co., Ltd. shine babban mai samar da kayayyaki wanda ya ƙware a cikin wafer da ci-gaba mai amfani da semiconductor.An sadaukar da mu don samar da ingantaccen inganci, abin dogaro, da sabbin samfura zuwa masana'antar semiconductor, masana'antar photovoltaic da sauran fannoni masu alaƙa.

Layin samfurinmu ya haɗa da samfuran graphite mai rufi na SiC/TaC da samfuran yumbu, wanda ya ƙunshi abubuwa daban-daban kamar silicon carbide, silicon nitride, da aluminum oxide da sauransu.

A halin yanzu, mu ne kawai masana'anta don samar da tsabta 99.9999% SiC shafi da 99.9% recrystallized silicon carbide.Max SiC shafi tsawon za mu iya yi 2640mm.

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Silicon carbide (SiC) guda kristal abu yana da babban band nisa nisa (~ Si 3 sau), high thermal conductivity (~ Si 3.3 sau ko GaAs sau 10), high electron jikewa gudun hijira kudi (~ Si 2.5 sau), high rushewar lantarki filin (~ Si sau 10 ko GaAs sau 5) da sauran fitattun halaye.

Na'urorin SiC suna da fa'idodin da ba za a iya maye gurbinsu ba a fagen babban zafin jiki, matsanancin matsin lamba, mita mai ƙarfi, na'urorin lantarki masu ƙarfi da matsananciyar aikace-aikacen muhalli kamar sararin samaniya, soja, makamashin nukiliya, da dai sauransu, suna haɓaka lahani na na'urorin kayan semiconductor na gargajiya a aikace. aikace-aikace, kuma sannu a hankali suna zama na al'ada na ikon semiconductor.

4H-SiC Silicon carbide substrate ƙayyadaddun bayanai

Abu项目	Ƙayyadaddun bayanai
Polytype 晶型	4H - SiC	6H- SiC
Diamita 晶圆直径	2 inci \|3 inci \|4 inci \|6 inci	2 inci \|3 inci \|4 inci \|6 inci
Kauri 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Gudanarwa 导电类型	N - nau'in / Semi-insulating N型导电片/ 半绝缘片	N - nau'in / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nitrogen) V (Vandium)	N2 (Nitrogen) V (Vandium)
Gabatarwa 晶向	A axis <0001> Kashe axis <0001> kashe 4°	A axis <0001> Kashe axis <0001> kashe 4°
Resistivity 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Maƙarƙashiyar Ƙarfafa (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Baka / Warp 翘曲度	≤25 μm	≤25 μm
Surface 表面处理	DSP/SSP	DSP/SSP
Daraja 产品等级	Matsayin samarwa / Bincike	Matsayin samarwa / Bincike
Crystal Stacking Sequence 堆积方式	ABCB	ABCABC
Lattice siga 晶格参数	a=3.076A, c=10.053A	a=3.073A, c=15.117A
Misali/eV (Band-gap) 禁带宽度	3.27v	3.02v
ε(Dielectric Constant) 介电常数	9.6	9.66
Fihirisar Magana 折射率	n0 = 2.719 ne = 2.777	n0 = 2.707, ne = 2.755

6H-SiC Silicon Carbide bayani dalla-dalla

Abu项目	Ƙayyadaddun bayanai
Polytype 晶型	6H-SiC
Diamita 晶圆直径	4 inci \|6 inci
Kauri 厚度	350μm ~ 450m
Gudanarwa 导电类型	N - nau'in / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	Nitrogen (N2) V (Vadium)
Gabatarwa 晶向	<0001> kashe 4°± 0.5°
Resistivity 电阻率	0.02 ~ 0.1 ohm-cm (Nau'in 6H-N)
Maƙarƙashiyar Ƙarfafa (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Baka / Warp 翘曲度	≤25 μm
Surface 表面处理	Si Face: CMP, Epi-Ready Fuskar C: Yaren mutanen Poland na gani
Daraja 产品等级	Matsayin bincike