SiC fil trays don aiwatar da etching na ICP a cikin masana'antar LED

Takaitaccen Bayani:

Silicon carbide sabon nau'in tukwane ne tare da babban aiki mai tsada da kyawawan kaddarorin kayan. Saboda fasalulluka kamar ƙarfin ƙarfi da taurin kai, juriyar zafin jiki, babban ƙarfin zafin jiki da juriya lalata sinadarai, Silicon Carbide na iya kusan jure duk matsakaicin sinadarai. Sabili da haka, ana amfani da SiC sosai a cikin hakar mai, sinadarai, injina da sararin samaniya, har ma da makamashin nukiliya kuma sojoji suna da buƙatu na musamman akan SIC.

Muna iya ƙira da ƙira bisa ga takamaiman girman ku tare da inganci mai kyau da lokacin isar da ma'ana.


Cikakken Bayani

Tags samfurin

Bayanin Samfura

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan farfajiyar graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon amsa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

Babban fasali:

1. High zafin jiki oxidation juriya:

juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.

2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.

3. Juriya juriya: babban taurin, m surface, lafiya barbashi.

4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Silicon carbide etched disk (2)

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties

Tsarin Crystal

FCC β lokaci

Yawan yawa

g/cm ³

3.21

Tauri

Vickers taurin

2500

Girman hatsi

μm

2 ~ 10

Tsaftar Sinadari

%

99.99995

Ƙarfin zafi

J·k-1 · K-1

640

Zazzabi Sublimation

2700

Ƙarfin Felexural

MPa (RT 4-maki)

415

Modul na Young

Gpa (4pt lankwasa, 1300 ℃)

430

Ƙarfafa Ƙarfafawa (CTE)

10-6K-1

4.5

Ƙarfafawar thermal

(W/mK)

300

Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
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