SiC Pin Trays don Tsarin Tsari na ICP a cikin Masana'antar LED

Takaitaccen Bayani:

Semicera's SiC Pin Trays don Tsarin ICP Etching a cikin Masana'antar LED an tsara su musamman don haɓaka inganci da daidaito a aikace-aikacen etching. An yi shi daga siliki carbide mai inganci, waɗannan fil ɗin suna ba da ingantaccen yanayin zafi, juriya na sinadarai, da ƙarfin injina. Madaidaici don buƙatun tsarin masana'antar LED, titin fil ɗin Semicera's SiC yana tabbatar da etching iri ɗaya, rage ƙazanta, da haɓaka amincin tsari gabaɗaya, yana ba da gudummawa ga samar da LED mai inganci.


Cikakken Bayani

Tags samfurin

Bayanin Samfura

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan saman graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon suna amsawa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

Babban fasali:

1. High zafin jiki oxidation juriya:

juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.

2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.

3. Juriya juriya: babban taurin, m surface, lafiya barbashi.

4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Silicon carbide etched disk (2)

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties

Tsarin Crystal

FCC β lokaci

Yawan yawa

g/cm ³

3.21

Tauri

Vickers taurin

2500

Girman hatsi

μm

2 ~ 10

Tsaftar Sinadari

%

99.99995

Ƙarfin zafi

J·k-1 · K-1

640

Zazzabi Sublimation

2700

Ƙarfin Felexural

MPa (RT 4-maki)

415

Modul na Young

Gpa (4pt lankwasa, 1300 ℃)

430

Ƙarfafa Ƙarfafawa (CTE)

10-6K-1

4.5

Ƙarfafawar thermal

(W/mK)

300

Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
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