Mai ɗaukar SiC don RTP/RTA mai saurin dumama maganin zafi

Takaitaccen Bayani:

Silicon carbide sabon nau'in tukwane ne tare da babban aiki mai tsada da kyawawan kaddarorin kayan.Saboda fasalulluka kamar ƙarfin ƙarfi da taurin kai, juriyar zafin jiki, babban ƙarfin zafin jiki da juriya lalata sinadarai, Silicon Carbide na iya kusan jure duk matsakaicin sinadarai.Sabili da haka, ana amfani da SiC sosai a cikin hakar mai, sinadarai, injina da sararin samaniya, har ma da makamashin nukiliya kuma sojoji suna da buƙatu na musamman akan SIC.Wasu aikace-aikacen al'ada da za mu iya bayarwa sune zoben hatimi don famfo, bawul da sulke na kariya da sauransu.

Muna iya ƙira da ƙira bisa ga takamaiman girman ku tare da inganci mai kyau da lokacin isar da ma'ana.


Cikakken Bayani

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Bayani

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan saman graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon suna amsawa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

Babban Siffofin

1. High zafin jiki oxidation juriya:
juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.
2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.
3. Juriya juriya: babban taurin, m surface, lafiya barbashi.
4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties

Tsarin Crystal FCC β lokaci
Yawan yawa g/cm ³ 3.21
Tauri Vickers taurin 2500
Girman hatsi μm 2 ~ 10
Tsaftar Sinadari % 99.99995
Ƙarfin zafi J·k-1 · K-1 640
Zazzabi Sublimation 2700
Ƙarfin Felexural MPa (RT 4-maki) 415
Modul na Young Gpa (4pt lankwasa, 1300 ℃) 430
Fadada thermal (CTE) 10-6K-1 4.5
Ƙarfafawar thermal (W/mK) 300
Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
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