A fagen fasahar lantarki ta yau, kayan aikin semiconductor suna taka muhimmiyar rawa. Tsakanin su,silicon carbide (SiC)a matsayin mai fadi da rata semiconductor abu, tare da kyakkyawan aiki abũbuwan amfãni, irin su high rushewar lantarki filin, high jikewa gudun, high thermal watsin, da dai sauransu, a hankali ya zama mayar da hankali na masu bincike da injiniyoyi. TheSilica carbide epitaxial disk, a matsayin muhimmin sashi na shi, ya nuna babban damar aikace-aikacen.
一, aikin diski na epitaxial: cikakken fa'idodi
1. Ultra-high rushewar wutar lantarki: idan aka kwatanta da na gargajiya silicon kayan, da rushewar lantarki filin nasiliki carbideya fi sau 10. Wannan yana nufin cewa a ƙarƙashin yanayin ƙarfin lantarki iri ɗaya, na'urorin lantarki suna amfani da suSilicon carbide epitaxial diskszai iya jure magudanar ruwa, ta yadda zai samar da na'urorin lantarki masu karfin gaske, masu karfin gaske.
2. High-gudun jikewa gudun: da jikewa gudun nasiliki carbideya fi sau 2 fiye da na silicon. Aiki a high zafin jiki da kuma high gudun, daSilica carbide epitaxial diskyana aiki mafi kyau, wanda ke inganta kwanciyar hankali da amincin na'urorin lantarki.
3. Babban ingancin thermal conductivity: thermal conductivity na silicon carbide ne fiye da 3 sau na silicon. Wannan fasalin yana ba da damar na'urorin lantarki don mafi kyawun watsar da zafi yayin ci gaba da aiki mai ƙarfi, don haka hana zafi da haɓaka amincin na'urar.
4. Kyakkyawan kwanciyar hankali na sinadarai: a cikin matsanancin yanayi kamar yanayin zafi mai zafi, matsa lamba mai ƙarfi da radiation mai ƙarfi, aikin silicon carbide har yanzu yana da ƙarfi kamar baya. Wannan fasalin yana ba da damar faifan siliki na siliki na epitaxial don kula da kyakkyawan aiki a fuskar mahalli masu rikitarwa.
二, tsarin sarrafawa: sassaka a hankali
Babban matakai don kera SIC faifan epitaxial sun haɗa da haɓakar tururi ta jiki (PVD), haɓakar tururin sinadarai (CVD) da haɓakar epitaxial. Kowane ɗayan waɗannan hanyoyin yana da halaye na kansa kuma yana buƙatar daidaitaccen sarrafa sigogi daban-daban don cimma kyakkyawan sakamako.
1. Tsarin PVD: Ta hanyar evaporation ko sputtering da sauran hanyoyin, ana ajiye maƙasudin SiC a kan substrate don samar da fim. Fim ɗin da aka shirya ta wannan hanya yana da tsabta mai kyau da kuma crystallinity mai kyau, amma saurin samarwa yana da jinkirin.
2. CVD tsari: Ta hanyar fasa da siliki carbide tushen gas a high zafin jiki, an ajiye a kan substrate don samar da wani bakin ciki fim. Kauri da daidaituwa na fim ɗin da aka shirya ta wannan hanyar ana iya sarrafawa, amma tsabta da crystallinity ba su da kyau.
3. Ci gaban Epitaxial: girma na SiC epitaxial Layer a kan silicon monocrystalline ko wasu kayan monocrystalline ta hanyar hanyar shigar da tururi. Layin epitaxial wanda aka shirya ta wannan hanya yana da ma'auni mai kyau da kyakkyawan aiki tare da kayan aiki, amma farashin yana da girma.
三、Application Prospect: Haskaka nan gaba
Tare da ci gaba da haɓaka fasahar lantarki da haɓaka buƙatu don babban aiki da ingantaccen na'urorin lantarki, silicon carbide epitaxial faifai yana da fa'ida mai fa'ida ta aikace-aikace a masana'antar na'urar semiconductor. An yi amfani da shi sosai wajen kera na'urori masu ƙarfi masu ƙarfi, kamar wutar lantarki, inverters, rectifiers, da dai sauransu. Bugu da ƙari, ana amfani da shi sosai a cikin ƙwayoyin hasken rana, LED da sauran filayen.
Tare da fa'idodin aikin sa na musamman da ci gaba da haɓaka tsarin masana'anta, faifan siliki na siliki na epitaxial a hankali yana nuna babban yuwuwar sa a cikin filin semiconductor. Muna da dalili na gaskata cewa a nan gaba na kimiyya da fasaha, zai taka muhimmiyar rawa.
Lokacin aikawa: Nuwamba-28-2023