A fagen fasahar lantarki ta yau, kayan aikin semiconductor suna taka muhimmiyar rawa.Daga cikin su, silicon carbide (SiC) a matsayin babban band rata semiconductor abu, tare da kyakkyawan aiki abũbuwan amfãni, kamar high rushewar lantarki, high jikewa gudun, high thermal watsin, da dai sauransu, a hankali ya zama mayar da hankali na masu bincike da injiniyoyi.Silicon carbide epitaxial disk, a matsayin muhimmin sashi na shi, ya nuna babban yuwuwar aikace-aikacen.
一, aikin diski na epitaxial: cikakken fa'idodi
1. Ultra-high rushewar filin lantarki: idan aka kwatanta da kayan silicon na gargajiya, lalacewar filin lantarki na silicon carbide ya fi sau 10.Wannan yana nufin cewa a ƙarƙashin yanayin irin ƙarfin lantarki, na'urorin lantarki masu amfani da faifai na siliki na siliki na epitaxial na iya jure wa manyan igiyoyin ruwa, ta yadda za a samar da na'urorin lantarki masu ƙarfi, masu ƙarfi, masu ƙarfi.
2. Babban saurin jikewa mai sauri: saurin jikewa na silicon carbide ya fi sau 2 na silicon.Yin aiki a babban zafin jiki da babban sauri, faifan epitaxial na silicon carbide yana aiki mafi kyau, wanda ke haɓaka kwanciyar hankali da amincin na'urorin lantarki.
3. Babban ingancin thermal conductivity: thermal conductivity na silicon carbide ne fiye da 3 sau na silicon.Wannan fasalin yana ba da damar na'urorin lantarki don mafi kyawun watsar da zafi yayin ci gaba da aiki mai ƙarfi, don haka hana zafi da haɓaka amincin na'urar.
4. Kyakkyawan kwanciyar hankali na sinadarai: a cikin matsanancin yanayi kamar yanayin zafi mai zafi, matsa lamba mai ƙarfi da radiation mai ƙarfi, aikin silicon carbide yana da kwanciyar hankali kamar baya.Wannan fasalin yana ba da damar faifan siliki na siliki na epitaxial don kula da kyakkyawan aiki a fuskar mahalli masu rikitarwa.
二, tsarin sarrafawa: sassaka a hankali
Babban matakai don kera SIC faifan epitaxial sun haɗa da haɓakar tururi ta jiki (PVD), haɓakar tururin sinadarai (CVD) da haɓakar epitaxial.Kowane ɗayan waɗannan hanyoyin yana da halayensa kuma yana buƙatar daidaitaccen sarrafa sigogi daban-daban don cimma kyakkyawan sakamako.
1. Tsarin PVD: Ta hanyar evaporation ko sputtering da sauran hanyoyin, ana ajiye maƙasudin SiC a kan substrate don samar da fim.Fim ɗin da aka shirya ta wannan hanya yana da tsabta mai kyau da kuma crystallinity mai kyau, amma saurin samarwa yana da jinkirin.
2. CVD tsari: Ta hanyar fasa da siliki carbide tushen gas a high zafin jiki, an ajiye a kan substrate don samar da wani bakin ciki fim.Kauri da daidaituwa na fim ɗin da aka shirya ta wannan hanyar ana iya sarrafawa, amma tsabta da crystallinity ba su da kyau.
3. Ci gaban Epitaxial: girma na SiC epitaxial Layer a kan silicon monocrystalline ko wasu kayan monocrystalline ta hanyar sinadari mai tururi.Layin epitaxial wanda aka shirya ta wannan hanya yana da ma'auni mai kyau da kyakkyawan aiki tare da kayan aiki, amma farashin yana da girma.
三、Application Prospect: Haskaka nan gaba
Tare da ci gaba da haɓaka fasahar lantarki da haɓaka buƙatu don babban aiki da ingantaccen na'urorin lantarki, silicon carbide epitaxial faifai yana da fa'ida mai fa'ida ta aikace-aikace a masana'antar na'urar semiconductor.An yi amfani da shi sosai wajen kera na'urori masu ƙarfi masu ƙarfi, kamar wutar lantarki, inverters, rectifiers, da dai sauransu. Bugu da ƙari, ana amfani da shi sosai a cikin ƙwayoyin hasken rana, LED da sauran filayen.
Tare da fa'idodin aikin sa na musamman da ci gaba da haɓaka tsarin masana'anta, faifan siliki na siliki na epitaxial a hankali yana nuna babban yuwuwar sa a cikin filin semiconductor.Muna da dalili na gaskata cewa a nan gaba na kimiyya da fasaha, zai taka muhimmiyar rawa.
Lokacin aikawa: Nuwamba-28-2023