A halin yanzu, hanyoyin shirye-shiryenSiC shafigalibi sun haɗa da hanyar gel-sol, hanyar sakawa, hanyar shafa buroshi, hanyar fesa plasma, hanyar amsawar iskar gas (CVR) da hanyar sanya tururi (CVD).
Hanyar haɗawa:
Hanyar wani nau'i ne na babban zafin jiki m lokaci sintering, wanda yafi amfani da cakuda Si foda da C foda a matsayin saka foda, da graphite matrix aka sanya a cikin saka foda, da kuma high zafin jiki sintering ne da za'ayi a cikin inert gas. , kuma a karshe daSiC shafiAna samuwa a saman matrix graphite.Tsarin yana da sauƙi kuma haɗuwa tsakanin sutura da substrate yana da kyau, amma daidaituwa na sutura tare da jagorancin kauri ba shi da kyau, wanda yake da sauƙi don samar da ƙarin ramuka kuma ya haifar da rashin ƙarfi na oxidation.
Hanyar shafawa:
Hanyar shafan goga ita ce goge albarkatun ruwa a saman matrix ɗin graphite, sannan a warkar da albarkatun ƙasa a wani yanayin zafi don shirya sutura.Tsarin yana da sauƙi kuma farashin yana da ƙasa, amma rufin da aka shirya ta hanyar gyaran gyare-gyaren goga yana da rauni a hade tare da substrate, rashin daidaituwa na sutura ba shi da kyau, murfin yana da bakin ciki kuma ƙarancin iskar oxygenation yana da ƙananan, kuma ana buƙatar wasu hanyoyin don taimakawa. shi.
Hanyar fesa Plasma:
Hanyar fesa plasma galibi shine don fesa kayan da aka narke ko narkar da su a saman matrix ɗin graphite tare da bindigar plasma, sannan a ƙarfafa da haɗin gwiwa don samar da sutura.Hanyar yana da sauƙi don aiki kuma yana iya shirya suturar silicon carbide mai ƙarancin ƙarfi, amma murfin silicon carbide da aka shirya ta hanyar sau da yawa yana da rauni sosai kuma yana haifar da juriya na iskar shaka, don haka ana amfani da shi gabaɗaya don shirye-shiryen kayan haɗin gwiwar SiC don haɓakawa. ingancin sutura.
Hanyar gel-sol:
Hanyar gel-sol shine yawanci don shirya nau'in yunifom da haske na sol wanda ke rufe saman matrix, bushewa cikin gel sannan sintering don samun sutura.Wannan hanya ce mai sauƙi don aiki da ƙananan farashi, amma rufin da aka samar yana da wasu kurakurai kamar ƙananan juriya na zafi da sauƙi mai sauƙi, don haka ba za a iya amfani da shi sosai ba.
Sinadarin Gas Reaction (CVR):
CVR yafi haifarSiC shafita hanyar amfani da Si da SiO2 foda don samar da tururi na SiO a babban zafin jiki, kuma jerin halayen sinadaran suna faruwa a saman C abu substrate.TheSiC shafiwanda aka shirya ta wannan hanyar yana da alaƙa da haɗin gwiwa tare da substrate, amma yanayin zafin jiki ya fi girma kuma farashin ya fi girma.
Zubar da Turin Chemical (CVD):
A halin yanzu, CVD shine babban fasaha don shiryawaSiC shafia kan substrate surface.Babban tsari shine jerin halayen jiki da sinadarai na lokacin iskar gas na reactant abu akan farfajiyar ƙasa, kuma a ƙarshe an shirya suturar SiC ta hanyar sakawa a saman ƙasa.Rufin SiC da aka shirya ta hanyar fasahar CVD yana da alaƙa da alaƙa da saman ƙasa, wanda zai iya inganta haɓakar iskar shaka da juriya na abubuwan da ke cikin ƙasa yadda ya kamata, amma lokacin ƙaddamarwa na wannan hanyar ya fi tsayi, kuma iskar gas tana da takamaiman mai guba. gas.
Lokacin aikawa: Nuwamba-06-2023