Tsarin shirye-shiryen kristal iri a cikin SiC guda kristal girma 3

Tabbatar da Ci gaba
Thesilicon carbide (SiC)An shirya lu'ulu'u iri suna bin ƙayyadaddun tsari kuma an inganta su ta hanyar ci gaban SiC crystal. Dandalin ci gaban da aka yi amfani da shi shine tanderun haɓaka haɓakar SiC mai haɓakawa tare da zafin girma na 2200 ℃, matsin girma na 200 Pa, da tsayin ci gaba na sa'o'i 100.

Shiri ya shafi a6-inch SiC wafertare da gogewar carbon da silicon duka, awaferkauri iri ɗaya na ≤10 µm, da ƙarancin fuskar silicon na ≤0.3 nm. An kuma shirya wani diamita na mm 200, takarda mai kauri 500 µm, tare da manne, barasa, da zane mara lint.

TheSiC waferan lullube shi da manne akan saman haɗin gwiwa don 15 seconds a 1500 r/min.

A m a kan bonding surface naSiC waferaka bushe a faranti mai zafi.

Takardar graphite daSiC wafer(bangaren haɗin kai yana fuskantar ƙasa) an jera su daga ƙasa zuwa sama kuma an sanya su a cikin tanderun daɗaɗɗen iri. An yi matsi mai zafi bisa ga tsarin da aka saita mai zafi. Hoto na 6 yana nuna saman kristal iri bayan tsarin girma. Ana iya ganin cewa saman lu'ulu'u iri yana da santsi ba tare da alamun delamination ba, yana nuna cewa lu'ulu'u na iri na SiC da aka shirya a cikin wannan binciken suna da inganci mai kyau da ɗigon haɗin gwiwa.

Kammalawa
Idan aka yi la'akari da hanyoyin haɗin kai na yanzu da rataye don gyare-gyaren iri, hanyar haɗin gwiwa da rataye an ba da shawarar. Wannan binciken ya mayar da hankali kan shirye-shiryen fim na carbon dawaferTsarin haɗin takarda graphite da ake buƙata don wannan hanyar, yana haifar da sakamako masu zuwa:

Danko na manne da ake buƙata don fim ɗin carbon akan wafer yakamata ya zama 100mPa·s, tare da zafin carbonization na ≥600 ℃. Mafi kyawun yanayin carbonization shine yanayin kariyar argon. Idan an yi a ƙarƙashin yanayi mara amfani, ƙimar injin ya kamata ya zama ≤1 Pa.

Duk hanyoyin da ake amfani da su na carbonization da haɗin kai suna buƙatar ƙarancin zafin jiki na warkewar carbonization da haɗin haɗin gwiwa akan farfajiyar wafer don fitar da iskar gas daga manne, hana kwasfa da lahani mara kyau a cikin layin haɗin gwiwa yayin carbonization.

Abubuwan haɗin haɗin gwiwa don takarda wafer/graphite yakamata su sami danko na 25mPa·s, tare da matsa lamba na ≥15 kN. Yayin aiwatar da haɗin kai, ya kamata a ɗaga zafin jiki a hankali a cikin kewayon ƙananan zafin jiki (<120 ℃) ​​sama da kusan awanni 1.5. Tabbacin ci gaban kristal na SiC ya tabbatar da cewa shirye-shiryen iri lu'ulu'u na SiC sun cika buƙatun don haɓakar SiC crystal mai inganci, tare da filaye mai santsi na kristal kuma babu hazo.