A matsayin daya daga cikin ginshiƙan sassanMOCVD kayan aiki, graphite tushe ne mai ɗauka da dumama jiki na substrate, wanda kai tsaye kayyade uniformity da kuma tsarki na fim abu, don haka da ingancin kai tsaye rinjayar da shirye-shiryen na epitaxial takardar, kuma a lokaci guda, tare da karuwa da yawan adadin. amfani da canjin yanayin aiki, yana da sauƙin sawa, na kayan masarufi.
Ko da yake graphite yana da kyau kwarai thermal watsin da kwanciyar hankali, yana da kyau fa'ida a matsayin tushe bangarenMOCVD kayan aiki, amma a cikin tsarin samarwa, graphite zai lalata foda saboda ragowar iskar gas da ƙwayoyin ƙarfe, kuma rayuwar sabis na tushen graphite za a ragu sosai.A lokaci guda, fadowar graphite foda zai haifar da gurɓataccen gurɓataccen guntu.
Bayyanar fasaha na sutura na iya samar da gyaran gyare-gyaren foda, haɓaka haɓakar thermal, da daidaita rarraba zafi, wanda ya zama babban fasaha don magance wannan matsala.Graphite tushe inMOCVD kayan aikiamfani yanayi, graphite tushe shafi shafi ya kamata hadu da wadannan halaye:
(1) Tushen graphite za a iya nannade shi sosai, kuma yawancin yana da kyau, in ba haka ba graphite tushe yana da sauƙin lalata a cikin iskar gas.
(2) Ƙarfin haɗin gwiwa tare da ginshiƙan graphite yana da girma don tabbatar da cewa rufin ba shi da sauƙin faɗuwa bayan yawancin yawan zafin jiki da ƙananan yanayin zafi.
(3) Yana da kyakkyawan kwanciyar hankali na sinadarai don guje wa gazawar shafi a cikin babban zafin jiki da yanayin lalata.
SiC yana da fa'idodi na juriya na lalata, haɓakar haɓakar thermal, juriya na zafin zafi da kwanciyar hankali mai ƙarfi, kuma yana iya aiki da kyau a cikin yanayin GaN epitaxial.Bugu da ƙari, ƙimar haɓakar haɓakar thermal na SiC ya bambanta kaɗan da na graphite, don haka SiC shine kayan da aka fi so don rufin saman ginshiƙi.
A halin yanzu, SiC na kowa shine nau'in 3C, 4H da 6H, kuma SiC na amfani da nau'ikan lu'ulu'u daban-daban sun bambanta.Misali, 4H-SiC na iya kera na'urori masu ƙarfi;6H-SiC shine mafi kwanciyar hankali kuma yana iya kera na'urorin lantarki;Saboda tsarinsa mai kama da GaN, ana iya amfani da 3C-SiC don samar da GaN epitaxial Layer da kera na'urorin SiC-GaN RF.3C-SiC kuma ana kiranta da sunaβ-SiC, da kuma amfani mai mahimmanciβ-SiC a matsayin fim da kayan shafa, don hakaβ-SiC a halin yanzu shine babban abu don sutura.
Lokacin aikawa: Nuwamba-06-2023