A cikin sarkar masana'antar semiconductor, musamman a cikin sarkar masana'antu na ƙarni na uku (fadi bandgap semiconductor), akwai ma'auni kumaepitaxialyadudduka. Menene mahimmancinepitaxialLayer? Menene bambanci tsakanin substrate da substrate?
Substrate shine awaferYa sanya daga semiconductor guda crystal kayan. Substrate na iya shiga kai tsayewaferhanyar haɗin masana'anta don samar da na'urorin semiconductor, ko ana iya sarrafa taepitaxialtsari don samar da wafers na epitaxial. A substrate ne kasa nawafer(yanke wafer, za ku iya samun ɗaya ya mutu bayan wani, sannan ku haɗa shi don zama guntu na almara) (a zahiri, ƙasan guntu gabaɗaya an rufe shi da Layer na zinare na baya, ana amfani da shi azaman haɗin "ƙasa", amma an yi shi a cikin tsari na baya), da kuma tushe wanda ke ɗaukar duk aikin tallafi (an gina ginin sama a cikin guntu a kan substrate).
Epitaxy yana nufin tsarin haɓaka sabon kristal guda ɗaya akan nau'in kristal guda ɗaya wanda aka sarrafa a hankali ta hanyar yankan, niƙa, gogewa, da dai sauransu. Sabon kristal guda ɗaya na iya zama kayan abu ɗaya kamar na substrate, ko kuma yana iya zama wani abu daban. (homoepitaxial ko heteroepitaxial).
Tun da sabon kafa guda crystal Layer girma tare da substrate crystal lokaci, shi ake kira epitaxial Layer (yawanci da yawa microns lokacin farin ciki. Ɗauki silicon a matsayin misali: ma'anar silicon epitaxial girma shi ne girma a Layer na crystal tare da kyau lattice tsarin mutunci. a kan siliki guda crystal substrate tare da wani takamaiman crystal fuskantarwa da daban-daban resistivity da kauri a matsayin substrate), da kuma substrate tare da epitaxial Layer ake kira epitaxial wafer (epitaxial wafer = epitaxial Layer + substrate). Ana yin aikin kera na'ura akan Layer epitaxial.
An raba epitaxiality zuwa homoepitaxiality da heteroepitaxial. Homoepitaxiality shine haɓaka Layer epitaxial na kayan abu ɗaya da na substrate akan ƙasa. Menene ma'anar homoepitaxiality? - Haɓaka kwanciyar hankali da amincin samfur. Ko da yake homoepitaxiality shine girma wani nau'i na epitaxial na kayan abu ɗaya kamar na substrate, ko da yake kayan abu ɗaya ne, yana iya inganta tsabtar kayan abu da daidaito na farfajiyar wafer. Idan aka kwatanta da wafers ɗin da aka goge da aka sarrafa ta hanyar goge goge na inji, abin da ake sarrafa shi ta hanyar epitaxiality yana da babban shimfidar ƙasa, tsafta mai ƙarfi, ƙarancin ƙananan lahani, da ƙarancin ƙazanta na saman. Saboda haka, da resistivity ne mafi uniform, kuma yana da sauki don sarrafa surface lahani kamar surface barbashi, stacking kurakurai, da dislocations. Epitaxy ba kawai yana inganta aikin samfur ba, har ma yana tabbatar da kwanciyar hankali da amincin samfur.
Menene fa'idodin yin wani Layer na siliki atom epitaxial akan ma'aunin wafer siliki? A cikin tsarin siliki na CMOS, haɓakar epitaxial (EPI, epitaxial) akan wafer substrate mataki ne mai mahimmancin tsari.
1. Inganta ingancin crystal
Matsalolin farko da ƙazanta: Substrate ɗin wafer na iya samun wasu lahani da ƙazanta yayin aikin masana'anta. Girman Layer na epitaxial zai iya haifar da inganci mai kyau, ƙananan lahani da ƙazanta-nau'i-nau'i guda-crystalline silicon Layer a kan ma'auni, wanda yake da mahimmanci ga masana'anta na gaba. Tsarin kristal na Uniform: Ci gaban Epitaxial na iya tabbatar da tsarin kristal iri ɗaya, rage tasirin iyakokin hatsi da lahani a cikin kayan ƙasa, kuma don haka haɓaka ingancin kristal gabaɗayan wafer.
2. Inganta aikin lantarki
Haɓaka halayen na'ura: Ta hanyar haɓaka Layer epitaxial a kan ma'auni, za'a iya sarrafa adadin abubuwan ƙara kuzari da nau'in silicon don haɓaka aikin lantarki na na'urar. Misali, doping na epitaxial Layer na iya daidaita daidaitaccen ƙarfin ƙarfin kofa da sauran sigogin lantarki na MOSFET. Rage ɗigogi a halin yanzu: Babban ingantattun yadudduka na epitaxial suna da ƙarancin ƙarancin lahani, wanda ke taimakawa rage ɗigogi a cikin na'urar, ta haka inganta aiki da amincin na'urar.
3. Support ci-gaba tsari nodes
Rage girman fasalin: A cikin ƙananan nodes na tsari (kamar 7nm, 5nm), girman fasalin na'urar yana ci gaba da raguwa, yana buƙatar ƙarin kayan haɓaka da inganci. Fasahar haɓakar Epitaxial na iya biyan waɗannan buƙatu kuma tana goyan bayan babban aiki da babban ɗimbin haɗaɗɗen kera da'ira. Inganta wutar lantarki mai rushewa: Za a iya tsara Layer epitaxial don samun ƙarfin rushewa mafi girma, wanda ke da mahimmanci don kera manyan na'urori masu ƙarfi da ƙarfin lantarki. Misali, a cikin na'urorin wutar lantarki, Layer epitaxial na iya ƙara ƙarancin wutar lantarki na na'urar kuma yana ƙara amintaccen kewayon aiki.
4. Tsarin daidaitawa da tsarin multilayer
Tsarin Layer Multi-Layer: Fasahar haɓakar Epitaxial tana ba da damar haɓakar sifofi masu yawa a kan wani abu, kuma yadudduka daban-daban na iya samun nau'ikan doping daban-daban. Wannan yana taimakawa sosai don kera hadaddun na'urorin CMOS da cimma haɗin kai mai girma uku. Daidaituwa: Tsarin ci gaban epitaxial ya dace sosai tare da matakan masana'antu na CMOS da ke wanzu kuma ana iya haɗa su cikin sauƙi cikin hanyoyin masana'anta da ke wanzu ba tare da gyaggyara layukan tsari ba.
Lokacin aikawa: Yuli-16-2024