SiC Coated Graphite Tushen Susceptors don MOCVD

SiC Rufaffen Graphite Base Susceptorsdon MOCVD daga semicera an ƙera su don samar da aiki na musamman a cikin hanyoyin haɓaka epitaxial. Babban ingancin silicon carbide shafi a kan graphite tushe yana tabbatar da kwanciyar hankali, dorewa, da ingantaccen yanayin zafi yayin ayyukan MOCVD (Metal Organic Chemical Vapor Deposition). Ta amfani da sabuwar fasahar susceptor ta semicera, za ku iya samun ingantacciyar daidaito da inganci a cikiYa da EpitoxykumaSiC Epitoxyaikace-aikace.

WadannanMOCVD Susceptorsan ƙera su don tallafawa kewayon mahimman abubuwan haɗin semiconductor, kamarPSS Etching Carrier, ICP Etching Carrier, kumaMai ɗaukar RTP, sanya su m ga daban-daban etching da epitaxial ayyuka. Ƙaddamar da Semicera ga manyan ma'auni yana tabbatar da cewa waɗannan masu cutar sun cika buƙatun samar da semiconductor na zamani.

Mafi dacewa don amfani a cikiLED EpitaxialSusceptor, Barrel Susceptor, da Monocrystalline Silicon tafiyar matakai, waɗannan masu cutar za a iya keɓance su don girman wafer daban-daban, gami da daidaitawar Pancake Susceptor. Hakanan suna da tasiri sosai wajen sarrafa Sassan Photovoltaic, yana mai da su muhimmin sashi a cikin haɓaka ingantaccen ƙwayoyin hasken rana.

Bugu da kari, SiC Coated Graphite Base Susceptors don MOCVD an inganta su don GaN akan SiC Epitaxy, suna ba da babban dacewa tare da kayan haɓaka na gaba. Ko kuna mai da hankali kan haɓaka yawan amfanin ƙasa ko haɓaka ingancin ci gaban epitaxial, masu cutar semicera suna ba da tabbaci da aikin da ake buƙata don cin nasara a manyan masana'antu na fasaha.