Bayani
TheSilicon Carbide Discdon MOCVD daga semicera, babban ingantaccen bayani wanda aka tsara don ingantaccen aiki a cikin hanyoyin haɓaka epitaxial. Semicera Silicon Carbide Disc yana ba da ingantaccen yanayin zafi da daidaito, yana mai da shi muhimmin sashi a cikin Si Epitaxy da SiC Epitaxy tafiyar matakai. Injiniya don jure yanayin zafi da buƙatun aikace-aikacen MOCVD, wannan diski yana tabbatar da ingantaccen aiki da tsawon rai.
Fas ɗinmu na Silicon Carbide ya dace da kewayon saitin MOCVD, gami daMai Rarraba MOCVDtsarin, kuma yana goyan bayan matakai na ci gaba kamar GaN akan SiC Epitoxy. Hakanan yana haɗawa lafiya tare da PSS Etching Carrier, ICP Etching Carrier, da RTP Carrier tsarin, haɓaka daidaito da ingancin kayan aikin ku. Ko amfani da Monocrystalline Silicon samarwa ko LED Epitaxial Susceptor aikace-aikace, wannan faifai yana tabbatar da sakamako na musamman.
Bugu da ƙari, Semicera's Silicon Carbide Disc yana daidaitawa zuwa jeri daban-daban, gami da Pancake Susceptor da saitin Susceptor Barrel, yana ba da sassauci a cikin mahallin masana'antu daban-daban. Haɗin ɓangarorin Photovoltaic yana ƙara ƙaddamar da aikace-aikacensa zuwa masana'antar makamashin hasken rana, yana mai da shi madaidaicin sashi kuma ba makawa ga zamani.epitaxialgirma da kuma semiconductor masana'antu.
Babban Siffofin
1 .High tsarki SiC mai rufi graphite
2. Mafi girman juriya na zafi & daidaituwar thermal
3. LafiyaSiC crystal mai rufidon m surface
4. Babban karko a kan tsabtace sinadarai
Babban Takaddun Shafi na CVD-SIC Coatings:
SiC-CVD | ||
Yawan yawa | (g/cc) | 3.21 |
Ƙarfin sassauƙa | (Mpa) | 470 |
Fadada thermal | (10-6/K) | 4 |
Ƙarfafawar thermal | (W/mK) | 300 |
Shiryawa da jigilar kaya
Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora:
Yawan (Yankuna) | 1-1000 | > 1000 |
Est. Lokaci (kwanaki) | 30 | Don a yi shawarwari |