Silicon Carbide SiC Mai Rufaffen Heater

Takaitaccen Bayani:

Silicon carbide hita an mai rufi da karfe oxide, wato, nisa infrared fenti silicon carbide farantin a matsayin radiation element, a cikin kashi rami (ko tsagi) a cikin lantarki dumama waya, a cikin kasa na silicon carbide farantin saka thicker rufi, refractory. , Abubuwan da ke hana zafi, sa'an nan kuma shigar a kan harsashi na karfe, ana iya amfani da tashar don haɗa wutar lantarki.

Lokacin da hasken infrared mai nisa na siliki carbide hita ya haskaka abu, zai iya sha, tunani da wucewa.Abu mai zafi da busassun abu yana ɗaukar makamashin hasken infrared mai nisa a wani zurfin ƙananan ƙwayoyin ciki da na sama a lokaci guda, yana haifar da tasirin dumama kai, ta yadda sauran ƙarfi ko kwayoyin ruwa suka ƙafe kuma suyi zafi daidai, don haka guje wa nakasu da canji na inganci. saboda nau'o'i daban-daban na fadada thermal, don haka bayyanar kayan aiki, kayan jiki da na inji, sauri da launi sun kasance cikakke.


Cikakken Bayani

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Bayani

Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan saman graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon suna amsawa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

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Babban Siffofin

1. High zafin jiki oxidation juriya:
juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.
2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.
3. Juriya juriya: babban taurin, m surface, lafiya barbashi.
4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties

Tsarin Crystal FCC β lokaci
Yawan yawa g/cm ³ 3.21
Tauri Vickers taurin 2500
Girman hatsi μm 2 ~ 10
Tsaftar Sinadari % 99.99995
Ƙarfin zafi J·k-1 · K-1 640
Zazzabi Sublimation 2700
Ƙarfin Felexural MPa (RT 4-maki) 415
Modul na Young Gpa (4pt lankwasa, 1300 ℃) 430
Fadada thermal (CTE) 10-6K-1 4.5
Ƙarfafawar thermal (W/mK) 300

Cikakken Hotuna

kasar waje (1) Jijiya (2) Jijiya (3) jiki (4) Jijiya (5)

Bayanin Kamfanin

kamar (3)
WeiTai Energy Technology Co., Ltd. shine babban mai ba da kayayyaki na ci-gaba na yumbu na semiconductor kuma kawai masana'anta a China waɗanda zasu iya samar da yumbu mai tsafta na silicon carbide (musamman SiC na Recrystallized) da kuma CVD SiC.Bugu da kari, kamfaninmu kuma ya himmatu ga filayen yumbu kamar alumina, aluminum nitride, zirconia, da silicon nitride, da sauransu.

Babban samfuranmu da suka haɗa da: Silicon carbide etching disc, silicon carbide jirgin ruwan, jirgin ruwan silicon carbide wafer (Photovoltaic&Semiconductor), bututun wutar lantarki na silicon carbide, filafin silicon carbide cantilever, silicon carbide chucks, silicon carbide katako, kazalika da CVD SiC shafi da TaC shafi.Abubuwan da aka fi amfani da su a cikin masana'antar semiconductor da masana'antar hoto, kamar kayan aiki don haɓakar crystal, epitaxy, etching, marufi, rufi da tanderun watsawa, da sauransu.
gijiya

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