SiC-mai rufin Epitaxial Reactor Barrel

Takaitaccen Bayani:

Semicera yana ba da ɗimbin kewayon susceptors da kayan aikin graphite waɗanda aka ƙera don maƙallan epitaxy daban-daban.

Ta hanyar dabarun haɗin gwiwa tare da OEM-manyan masana'antu, ƙwararrun kayan aiki, da ƙwarewar masana'antu na ci gaba, Semicera yana ba da ƙira da aka keɓance don biyan takamaiman buƙatun aikace-aikacen ku. Alƙawarinmu don haɓakawa yana tabbatar da cewa kun sami mafi kyawun mafita don buƙatun ku na reactor na epitaxy.

 

 


Cikakken Bayani

Tags samfurin

Bayani

Kamfaninmu yana bayarwaSiC shafiaiwatar da ayyuka a saman graphite, tukwane da sauran kayan ta hanyar CVD, don haka iskar gas na musamman da ke ɗauke da carbon da silicon na iya amsawa a babban zafin jiki don samun ƙwayoyin Sic masu tsafta, waɗanda za a iya ajiye su a saman kayan da aka rufe don samar daSiC kariya Layerga epitaxy ganga irin hy pnotic.

 

yadda (1)

yadda (2)

Babban Siffofin

1. High zafin jiki oxidation juriya:
juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.
2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.
3. Juriya juriya: babban taurin, m surface, lafiya barbashi.
4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

Babban Bayani na CVD-SIC Coating

SiC-CVD Properties
Tsarin Crystal FCC β lokaci
Yawan yawa g/cm ³ 3.21
Tauri Vickers taurin 2500
Girman hatsi μm 2 ~ 10
Tsaftar Sinadari % 99.99995
Ƙarfin zafi J·k-1 · K-1 640
Zazzabi Sublimation 2700
Ƙarfin Felexural MPa (RT 4-maki) 415
Modul na Young Gpa (4pt lankwasa, 1300 ℃) 430
Ƙarfafa Ƙarfafawa (CTE) 10-6K-1 4.5
Ƙarfafawar thermal (W/mK) 300
Semicera wurin aiki
Wurin aiki Semicera 2
Injin kayan aiki
Gudanar da CNN, tsabtace sinadarai, murfin CVD
Hidimarmu

  • Na baya:
  • Na gaba: