Bayani
Silicon Carbide EpitaxialFayafai na Wafer don Kayan aikin VEECO daga semicera an ƙera su daidai-inji don ci gaba da tsarin epitaxial, yana tabbatar da sakamako mai inganci a cikin duka biyun.Ya da EpitoxykumaSiC Epitoxyaikace-aikace. Waɗannan fayafai na wafer an tsara su musamman don kayan aikin VEECO, suna haɓaka aiki da inganci na matakai daban-daban na masana'antar semiconductor. Ƙwarewar Semicera tana ba da garanti na musamman na dorewa da daidaito don aikace-aikace masu mahimmanci.
Wadannan fayafai wafer epitaxial sun dace don amfani dasuMai Rarraba MOCVDtsarin, yana ba da tallafi mai ƙarfi don mahimman abubuwa kamarPSS Etching Carrier, ICP Etching Carrier, kumaMai ɗaukar RTP. Bugu da ƙari, suna ba da ingantaccen daidaituwa tare daLED Epitaxial Susceptor, Barrel Susceptor, da Monocrystalline Silicon tafiyar matakai, tabbatar da cewa samar da Lines kula da mafi girma ma'auni na inganci da daidaito.
An ƙera shi don fasahar yankan-baki, waɗannan fayafai na wafer suna ba da gudummawa sosai ga samar da Sassan Photovoltaic da sauƙaƙe matakai masu rikitarwa kamar GaN akan SiC Epitaxy. Ko ana amfani da shi don daidaitawar Pancake Susceptor ko wasu aikace-aikacen da ake buƙata, Semicera's Silicon Carbide Epitaxial Wafer Fayafai suna ba da ingantaccen tushe don masana'antar haɓaka semiconductor, yana tabbatar da ingantaccen aiki da dorewa na dogon lokaci.
Babban Siffofin
1 .High tsarki SiC mai rufi graphite
2. Mafi girman juriya na zafi & daidaituwar thermal
3. LafiyaSiC crystal mai rufidon m surface
4. Babban karko a kan tsabtace sinadarai
Babban Takaddun Shafi na CVD-SIC Coatings:
SiC-CVD | ||
Yawan yawa | (g/cc) | 3.21 |
Ƙarfin sassauƙa | (Mpa) | 470 |
Fadada thermal | (10-6/K) | 4 |
Ƙarfafawar thermal | (W/mK) | 300 |
Shiryawa da jigilar kaya
Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora:
Yawan (Yankuna) | 1-1000 | > 1000 |
Est. Lokaci (kwanaki) | 30 | Don a yi shawarwari |