Bayani
Masu ɗaukar Wafertare daSilicon Carbide (SiC) Rufidaga semicera an tsara su da ƙwarewa don haɓakar haɓakar haɓakar epitaxial, yana tabbatar da kyakkyawan sakamakoYa da EpitoxykumaSiC Epitoxyaikace-aikace. Madaidaicin injiniyoyin injiniyoyin Semicera an gina su don jure matsanancin yanayi, yana mai da su mahimman abubuwan haɗin gwiwa a cikin tsarin MOCVD Susceptor don masana'antu da ke buƙatar daidaito da tsayi.
Wadannan masu ɗaukar wafer suna da yawa, suna tallafawa matakai masu mahimmanci tare da kayan aiki irin suPSS Etching Carrier, ICP Etching Carrier, kumaMai ɗaukar RTP. Rufin SiC ɗin su mai ƙarfi yana haɓaka aiki don aikace-aikace kamarLED EpitaxialSusceptor da Monocrystalline Silicon, yana tabbatar da daidaiton sakamako har ma a cikin yanayin da ake buƙata.
Akwai a cikin gyare-gyare masu yawa, irin su Barrel Susceptor da Pancake Susceptor, waɗannan dillalai suna taka muhimmiyar rawa a cikin masana'antar hoto da semiconductor, suna tallafawa samar da ɓangarorin Photovoltaic da sauƙaƙe GaN akan hanyoyin SiC Epitaxy. Tare da mafi kyawun ƙirar su, waɗannan dillalai sune mahimman kadara ga masana'antun da ke neman samar da ingantaccen inganci.
Babban Siffofin
1 .High tsarki SiC mai rufi graphite
2. Mafi girman juriya na zafi & daidaituwar thermal
3. LafiyaSiC crystal mai rufidon m surface
4. Babban karko a kan tsabtace sinadarai
Babban Takaddun Shafi na CVD-SIC Coatings:
| SiC-CVD | ||
| Yawan yawa | (g/cc) | 3.21 |
| Ƙarfin sassauƙa | (Mpa) | 470 |
| Fadada thermal | (10-6/K) | 4 |
| Ƙarfafawar thermal | (W/mK) | 300 |
Shiryawa da jigilar kaya
Ikon bayarwa:
10000 Pieces/Perces per month
Marufi & Bayarwa:
Shiryawa: Daidaita & Ƙarfin Packing
Jakar poly + Akwatin + Katin + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Lokacin Jagora:
| Yawan (Yankuna) | 1-1000 | > 1000 |
| Est. Lokaci (kwanaki) | 30 | Don a yi shawarwari |
